High speed antimony-based superlattice photodetectors transferred on sapphire

Arash Dehzangi; Ryan P McClintock; Donghai Wu; Jiakai Li; Stephen M. Johnson; Emily Dial; Manijeh Razeghi

doi:10.7567/1882-0786/ab4a8e

High speed antimony-based superlattice photodetectors transferred on sapphire

Arash Dehzangi, Ryan P McClintock, Donghai Wu, Jiakai Li, Stephen M. Johnson, Emily Dial, Manijeh Razeghi

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low-loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top-down processing and a chemical epilayer release technique. After transfer the -3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under -15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance.

Original language	English (US)
Article number	116502
Journal	Applied Physics Express
Volume	12
Issue number	11
DOIs	https://doi.org/10.7567/1882-0786/ab4a8e
State	Published - Nov 1 2019

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "High speed antimony-based superlattice photodetectors transferred on sapphire",

abstract = "We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low-loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top-down processing and a chemical epilayer release technique. After transfer the -3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under -15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance.",

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AU - Dehzangi, Arash

AU - McClintock, Ryan P

AU - Wu, Donghai

AU - Li, Jiakai

AU - Johnson, Stephen M.

AU - Dial, Emily

AU - Razeghi, Manijeh

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AB - We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low-loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top-down processing and a chemical epilayer release technique. After transfer the -3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under -15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance.

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High speed antimony-based superlattice photodetectors transferred on sapphire

Abstract

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