We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal-semiconductor-metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were < 10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10-24 A2/Hz) up to 5 V, for the undoped GaN MSM detector.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Feb 1 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)