High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN

D. Walker*, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

169 Scopus citations

Abstract

We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal-semiconductor-metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were < 10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10-24 A2/Hz) up to 5 V, for the undoped GaN MSM detector.

Original languageEnglish (US)
Pages (from-to)762-764
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number5
DOIs
StatePublished - Feb 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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