High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN

D. Walker; E. Monroy; P. Kung; J. Wu; M. Hamilton; F. J. Sanchez; J. Diaz; M. Razeghi

doi:10.1063/1.123303

High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN

D. Walker^*, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

188 Scopus citations

Abstract

We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal-semiconductor-metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were < 10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10^-24 A²/Hz) up to 5 V, for the undoped GaN MSM detector.

Original language	English (US)
Pages (from-to)	762-764
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	5
DOIs	https://doi.org/10.1063/1.123303
State	Published - Feb 1 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN",

abstract = "We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal-semiconductor-metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were < 10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10-24 A2/Hz) up to 5 V, for the undoped GaN MSM detector.",

author = "D. Walker and E. Monroy and P. Kung and J. Wu and M. Hamilton and Sanchez, {F. J.} and J. Diaz and M. Razeghi",

year = "1999",

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doi = "10.1063/1.123303",

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T1 - High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN

AU - Walker, D.

AU - Monroy, E.

AU - Kung, P.

AU - Wu, J.

AU - Hamilton, M.

AU - Sanchez, F. J.

AU - Diaz, J.

AU - Razeghi, M.

PY - 1999/2/1

Y1 - 1999/2/1

N2 - We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal-semiconductor-metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were < 10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10-24 A2/Hz) up to 5 V, for the undoped GaN MSM detector.

AB - We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal-semiconductor-metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were < 10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10-24 A2/Hz) up to 5 V, for the undoped GaN MSM detector.

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JO - Applied Physics Letters

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High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN

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