High speed short wavelength infrared heterojunction phototransistors based on type II superlattices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ∼2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×1011 cm·Hz1/2/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80μm diameter circular diode size under 20 V applied reverse bias, a -3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nano Electronics and Photonics XVII
EditorsManijeh Razeghi, Jay S. Lewis, Giti A. Khodaparast, Pedram Khalili
PublisherSPIE
ISBN (Electronic)9781510633391
DOIs
StatePublished - Jan 1 2020
EventQuantum Sensing and Nano Electronics and Photonics XVII 2020 - San Francisco, United States
Duration: Feb 2 2020Feb 6 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11288
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceQuantum Sensing and Nano Electronics and Photonics XVII 2020
CountryUnited States
CitySan Francisco
Period2/2/202/6/20

Keywords

  • -3 dB cut-off frequency
  • Heterojunction Phototransistors
  • High Speed
  • Quantum Efficiency
  • Short Wavelength Infrared
  • Type-II Superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Li, J., Dehzangi, A., Wu, D., & Razeghi, M. (2020). High speed short wavelength infrared heterojunction phototransistors based on type II superlattices. In M. Razeghi, J. S. Lewis, G. A. Khodaparast, & P. Khalili (Eds.), Quantum Sensing and Nano Electronics and Photonics XVII [1128813] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11288). SPIE. https://doi.org/10.1117/12.2548611