@inproceedings{ed4cc0ad20834c6ab16cf5f8eea0ac5b,
title = "High speed short wavelength infrared heterojunction phototransistors based on type II superlattices",
abstract = "A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ∼2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×1011 cm·Hz1/2/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80μm diameter circular diode size under 20 V applied reverse bias, a -3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection.",
keywords = "-3 dB cut-off frequency, Heterojunction Phototransistors, High Speed, Quantum Efficiency, Short Wavelength Infrared, Type-II Superlattices",
author = "Jiakai Li and Arash Dehzangi and Donghai Wu and Manijeh Razeghi",
note = "Publisher Copyright: {\textcopyright} 2020 SPIE.; Quantum Sensing and Nano Electronics and Photonics XVII 2020 ; Conference date: 02-02-2020 Through 06-02-2020",
year = "2020",
doi = "10.1117/12.2548611",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Manijeh Razeghi and Lewis, {Jay S.} and Khodaparast, {Giti A.} and Pedram Khalili",
booktitle = "Quantum Sensing and Nano Electronics and Photonics XVII",
}