High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy

Shiyong Zhang; Zhichuan Niu; Haiqiao Ni; Donghai Wu; Zhenhong He; Zheng Sun; Qin Han; Ronghan Wu

doi:10.1063/1.2108117

High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy

Shiyong Zhang, Zhichuan Niu^*, Haiqiao Ni, Donghai Wu, Zhenhong He, Zheng Sun, Qin Han, Ronghan Wu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

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Abstract

High structural and optical quality 1.3 μm GaInNAsGaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the Ga In0.425 NAsGaAs (6 nm20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425 GaAsGaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.

Original language	English (US)
Article number	161911
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	16
DOIs	https://doi.org/10.1063/1.2108117
State	Published - Oct 17 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2108117

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title = "High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy",

abstract = "High structural and optical quality 1.3 μm GaInNAsGaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the Ga In0.425 NAsGaAs (6 nm20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425 GaAsGaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.",

author = "Shiyong Zhang and Zhichuan Niu and Haiqiao Ni and Donghai Wu and Zhenhong He and Zheng Sun and Qin Han and Ronghan Wu",

note = "Funding Information: This work is partly supported by the National Natural Science Foundation of China (Grant Nos. 90201026 and 60137020), the National High Technology Research and Development Program, and the Special Funds for Major State Basic Research Project. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2005",

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T1 - High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy

AU - Zhang, Shiyong

AU - Niu, Zhichuan

AU - Ni, Haiqiao

AU - Wu, Donghai

AU - He, Zhenhong

AU - Sun, Zheng

AU - Han, Qin

AU - Wu, Ronghan

N1 - Funding Information: This work is partly supported by the National Natural Science Foundation of China (Grant Nos. 90201026 and 60137020), the National High Technology Research and Development Program, and the Special Funds for Major State Basic Research Project. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2005/10/17

Y1 - 2005/10/17

N2 - High structural and optical quality 1.3 μm GaInNAsGaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the Ga In0.425 NAsGaAs (6 nm20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425 GaAsGaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.

AB - High structural and optical quality 1.3 μm GaInNAsGaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the Ga In0.425 NAsGaAs (6 nm20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425 GaAsGaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.

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High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy

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