High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy

Shiyong Zhang, Zhichuan Niu*, Haiqiao Ni, Donghai Wu, Zhenhong He, Zheng Sun, Qin Han, Ronghan Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

High structural and optical quality 1.3 μm GaInNAsGaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the Ga In0.425 NAsGaAs (6 nm20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425 GaAsGaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.

Original languageEnglish (US)
Article number161911
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number16
DOIs
StatePublished - Oct 17 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy'. Together they form a unique fingerprint.

Cite this