High structural and optical quality 1.3 μm GaInNAsGaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the Ga In0.425 NAsGaAs (6 nm20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425 GaAsGaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)