High Temperature Electronic and Thermal Transport Properties of EuGa2−xInxSb2

Sevan Chanakian, Rochelle Weber, Umut Aydemir*, Alim Ormeci, Jean Pierre Fleurial, Sabah Bux, G. Jeffrey Snyder

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The Zintl phase EuGa2Sb2 was synthesized via ball milling followed by hot pressing. The crystal structure of EuGa2Sb2 is comprised of a 3-D network of polyanionic [Ga2Sb2]2− tunnels filled with Eu cations that provide charge balance (Eu2+[Ga2Sb2]2−). Here we report the temperature-dependent resistivity, Hall Effect, Seebeck coefficient and thermal conductivity for EuGa2−xInxSb2 (x = 0, 0.05, 0.1) from 300 K to 775 K. Experimental results demonstrate that the material is a p-type semiconductor. However, a small band gap (∼0.1 eV) prevents EuGa2Sb2 from having high zT at higher temperatures. Isoelectronic substitution of In on the Ga site leads to point defect scattering of holes and phonons, thus reducing thermal conductivity and resulting in a slight improvement in zT.

Original languageEnglish (US)
Pages (from-to)4798-4804
Number of pages7
JournalJournal of Electronic Materials
Volume46
Issue number8
DOIs
StatePublished - Aug 1 2017

Keywords

  • EuGaSb
  • semiconductor
  • thermoelectric
  • zintl phase

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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