High Temperature Electronic and Thermal Transport Properties of EuGa2−xInxSb2

Sevan Chanakian; Rochelle Weber; Umut Aydemir; Alim Ormeci; Jean Pierre Fleurial; Sabah Bux; G. Jeffrey Snyder

doi:10.1007/s11664-017-5423-y

High Temperature Electronic and Thermal Transport Properties of EuGa_2−xIn_xSb₂

Sevan Chanakian, Rochelle Weber, Umut Aydemir^*, Alim Ormeci, Jean Pierre Fleurial, Sabah Bux, G. Jeffrey Snyder

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The Zintl phase EuGa₂Sb₂ was synthesized via ball milling followed by hot pressing. The crystal structure of EuGa₂Sb₂ is comprised of a 3-D network of polyanionic [Ga₂Sb₂]²⁻ tunnels filled with Eu cations that provide charge balance (Eu²⁺[Ga₂Sb₂]²⁻). Here we report the temperature-dependent resistivity, Hall Effect, Seebeck coefficient and thermal conductivity for EuGa_2−xIn_xSb₂ (x = 0, 0.05, 0.1) from 300 K to 775 K. Experimental results demonstrate that the material is a p-type semiconductor. However, a small band gap (∼0.1 eV) prevents EuGa₂Sb₂ from having high zT at higher temperatures. Isoelectronic substitution of In on the Ga site leads to point defect scattering of holes and phonons, thus reducing thermal conductivity and resulting in a slight improvement in zT.

Original language	English (US)
Pages (from-to)	4798-4804
Number of pages	7
Journal	Journal of Electronic Materials
Volume	46
Issue number	8
DOIs	https://doi.org/10.1007/s11664-017-5423-y
State	Published - Aug 1 2017

Keywords

EuGaSb
semiconductor
thermoelectric
zintl phase

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-017-5423-y

Cite this

@article{a13b8579e1c843dfb5a18c297ade5de3,

title = "High Temperature Electronic and Thermal Transport Properties of EuGa2−xInxSb2 ",

abstract = "The Zintl phase EuGa2Sb2 was synthesized via ball milling followed by hot pressing. The crystal structure of EuGa2Sb2 is comprised of a 3-D network of polyanionic [Ga2Sb2]2− tunnels filled with Eu cations that provide charge balance (Eu2+[Ga2Sb2]2−). Here we report the temperature-dependent resistivity, Hall Effect, Seebeck coefficient and thermal conductivity for EuGa2−xInxSb2 (x = 0, 0.05, 0.1) from 300 K to 775 K. Experimental results demonstrate that the material is a p-type semiconductor. However, a small band gap (∼0.1 eV) prevents EuGa2Sb2 from having high zT at higher temperatures. Isoelectronic substitution of In on the Ga site leads to point defect scattering of holes and phonons, thus reducing thermal conductivity and resulting in a slight improvement in zT.",

keywords = "EuGaSb, semiconductor, thermoelectric, zintl phase",

author = "Sevan Chanakian and Rochelle Weber and Umut Aydemir and Alim Ormeci and Fleurial, {Jean Pierre} and Sabah Bux and Snyder, {G. Jeffrey}",

note = "Funding Information: This research was performed partially at the Jet Propulsion Laboratory supported by the NASA Science Missions Directorate{\textquoteright}s Radioisotope Power System{\textquoteright}s Thermoelectric Technology Development project under contract with the NASA. U.A. acknowledges the financial assistance provided by The Scientific and Technological Research Council of Turkey. S.C. and U.A. thank Alexandra Zevalkink for her edits and discussions, Douglas Hofmann for speed of sound measurements, Kurt Star for his input during discussions and Stephanie Reyes, Prastuti Singh, and Eugene Vinitsky for their help finding literature. A.O. thanks Ulrike Nitzsche from IFW Dresden, Germany for technical help in computational work. Publisher Copyright: {\textcopyright} 2017, The Minerals, Metals & Materials Society.",

year = "2017",

month = aug,

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doi = "10.1007/s11664-017-5423-y",

language = "English (US)",

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T1 - High Temperature Electronic and Thermal Transport Properties of EuGa2−xInxSb2

AU - Chanakian, Sevan

AU - Weber, Rochelle

AU - Aydemir, Umut

AU - Ormeci, Alim

AU - Fleurial, Jean Pierre

AU - Bux, Sabah

AU - Snyder, G. Jeffrey

N1 - Funding Information: This research was performed partially at the Jet Propulsion Laboratory supported by the NASA Science Missions Directorate’s Radioisotope Power System’s Thermoelectric Technology Development project under contract with the NASA. U.A. acknowledges the financial assistance provided by The Scientific and Technological Research Council of Turkey. S.C. and U.A. thank Alexandra Zevalkink for her edits and discussions, Douglas Hofmann for speed of sound measurements, Kurt Star for his input during discussions and Stephanie Reyes, Prastuti Singh, and Eugene Vinitsky for their help finding literature. A.O. thanks Ulrike Nitzsche from IFW Dresden, Germany for technical help in computational work. Publisher Copyright: © 2017, The Minerals, Metals & Materials Society.

PY - 2017/8/1

Y1 - 2017/8/1

N2 - The Zintl phase EuGa2Sb2 was synthesized via ball milling followed by hot pressing. The crystal structure of EuGa2Sb2 is comprised of a 3-D network of polyanionic [Ga2Sb2]2− tunnels filled with Eu cations that provide charge balance (Eu2+[Ga2Sb2]2−). Here we report the temperature-dependent resistivity, Hall Effect, Seebeck coefficient and thermal conductivity for EuGa2−xInxSb2 (x = 0, 0.05, 0.1) from 300 K to 775 K. Experimental results demonstrate that the material is a p-type semiconductor. However, a small band gap (∼0.1 eV) prevents EuGa2Sb2 from having high zT at higher temperatures. Isoelectronic substitution of In on the Ga site leads to point defect scattering of holes and phonons, thus reducing thermal conductivity and resulting in a slight improvement in zT.

AB - The Zintl phase EuGa2Sb2 was synthesized via ball milling followed by hot pressing. The crystal structure of EuGa2Sb2 is comprised of a 3-D network of polyanionic [Ga2Sb2]2− tunnels filled with Eu cations that provide charge balance (Eu2+[Ga2Sb2]2−). Here we report the temperature-dependent resistivity, Hall Effect, Seebeck coefficient and thermal conductivity for EuGa2−xInxSb2 (x = 0, 0.05, 0.1) from 300 K to 775 K. Experimental results demonstrate that the material is a p-type semiconductor. However, a small band gap (∼0.1 eV) prevents EuGa2Sb2 from having high zT at higher temperatures. Isoelectronic substitution of In on the Ga site leads to point defect scattering of holes and phonons, thus reducing thermal conductivity and resulting in a slight improvement in zT.

KW - EuGaSb

KW - semiconductor

KW - thermoelectric

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