High Temperature Electronic and Thermal Transport Properties of EuGa_2−xIn_xSb₂

INIS

• thermal conductivity 66%
• balances 33%
• scattering 33%
• milling 33%
• hall effect 33%
• charges 33%
• transport 33%
• semiconductor materials 33%
• high temperature 33%
• cations 33%
• crystal structure 33%
• phonons 33%
• temperature dependence 33%
• holes 33%
• point defects 33%
• hot pressing 33%

Material Science

• Temperature 100%
• Thermal Conductivity 66%
• Semiconductor Material 33%
• Electrical Resistivity 33%
• Hot Pressing 33%
• Zintl Phase 33%
• Milling 33%
• Material 33%
• Electronics 33%
• Crystal Structure 33%