High temperature thermoelectric properties of Czochralski-pulled Ba 8Ga16Ge30

M. Christensen; G. Jeffrey Snyder; B. B. Iversen

doi:10.1109/ICT.2006.331265

High temperature thermoelectric properties of Czochralski-pulled Ba ₈Ga₁₆Ge₃₀

M. Christensen^*, G. Jeffrey Snyder, B. B. Iversen

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Scopus citations

Abstract

High temperature thermoelectric properties have been measured on a Czochralski pulled Ba₈Ga₁₆Ge₃₀ crystal. Complete transport properties obtained in the temperature range from 273K to 1150K. The physical properties are reproducible even after thermal cycling. The Seebeck coefficient reveals the sample to be an n-type conductor with a maximum value of -148 μV/K at 1073K. The electrical resistivity shows the characteristics of a heavily doped semi conductor, and it goes through a maximum at 1073 K with a value of 1.7 mΩ-cm. The thermal conductivity goes through a minimum of 1.25 W/m-K around 900K, and ZT reaches a maximum of 0.9 at 1000 K.

Original language	English (US)
Title of host publication	Proceedings ICT'06 - 25th International Conference on Thermoelectrics
Pages	40-43
Number of pages	4
DOIs	https://doi.org/10.1109/ICT.2006.331265
State	Published - Dec 1 2006
Event	ICT'06 - 25th International Conference on Thermoelectrics - Vienna, Austria Duration: Aug 6 2006 → Aug 10 2006

Other

Other	ICT'06 - 25th International Conference on Thermoelectrics
Country/Territory	Austria
City	Vienna
Period	8/6/06 → 8/10/06

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ICT.2006.331265

Cite this

@inproceedings{c7b533c8c12c452f82dabea158213806,

title = "High temperature thermoelectric properties of Czochralski-pulled Ba 8Ga16Ge30",

abstract = "High temperature thermoelectric properties have been measured on a Czochralski pulled Ba8Ga16Ge30 crystal. Complete transport properties obtained in the temperature range from 273K to 1150K. The physical properties are reproducible even after thermal cycling. The Seebeck coefficient reveals the sample to be an n-type conductor with a maximum value of -148 μV/K at 1073K. The electrical resistivity shows the characteristics of a heavily doped semi conductor, and it goes through a maximum at 1073 K with a value of 1.7 mΩ-cm. The thermal conductivity goes through a minimum of 1.25 W/m-K around 900K, and ZT reaches a maximum of 0.9 at 1000 K.",

author = "M. Christensen and Snyder, {G. Jeffrey} and Iversen, {B. B.}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/ICT.2006.331265",

language = "English (US)",

isbn = "1424408105",

pages = "40--43",

booktitle = "Proceedings ICT'06 - 25th International Conference on Thermoelectrics",

note = "ICT'06 - 25th International Conference on Thermoelectrics ; Conference date: 06-08-2006 Through 10-08-2006",

}

TY - GEN

T1 - High temperature thermoelectric properties of Czochralski-pulled Ba 8Ga16Ge30

AU - Christensen, M.

AU - Snyder, G. Jeffrey

AU - Iversen, B. B.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - High temperature thermoelectric properties have been measured on a Czochralski pulled Ba8Ga16Ge30 crystal. Complete transport properties obtained in the temperature range from 273K to 1150K. The physical properties are reproducible even after thermal cycling. The Seebeck coefficient reveals the sample to be an n-type conductor with a maximum value of -148 μV/K at 1073K. The electrical resistivity shows the characteristics of a heavily doped semi conductor, and it goes through a maximum at 1073 K with a value of 1.7 mΩ-cm. The thermal conductivity goes through a minimum of 1.25 W/m-K around 900K, and ZT reaches a maximum of 0.9 at 1000 K.

AB - High temperature thermoelectric properties have been measured on a Czochralski pulled Ba8Ga16Ge30 crystal. Complete transport properties obtained in the temperature range from 273K to 1150K. The physical properties are reproducible even after thermal cycling. The Seebeck coefficient reveals the sample to be an n-type conductor with a maximum value of -148 μV/K at 1073K. The electrical resistivity shows the characteristics of a heavily doped semi conductor, and it goes through a maximum at 1073 K with a value of 1.7 mΩ-cm. The thermal conductivity goes through a minimum of 1.25 W/m-K around 900K, and ZT reaches a maximum of 0.9 at 1000 K.

UR - http://www.scopus.com/inward/record.url?scp=46149096509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46149096509&partnerID=8YFLogxK

U2 - 10.1109/ICT.2006.331265

DO - 10.1109/ICT.2006.331265

M3 - Conference contribution

AN - SCOPUS:46149096509

SN - 1424408105

SN - 9781424408108

SP - 40

EP - 43

BT - Proceedings ICT'06 - 25th International Conference on Thermoelectrics

T2 - ICT'06 - 25th International Conference on Thermoelectrics

Y2 - 6 August 2006 through 10 August 2006

ER -