High temperature thermoelectric properties of Czochralski-pulled Ba 8Ga16Ge30

M. Christensen*, G. Jeffrey Snyder, B. B. Iversen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

High temperature thermoelectric properties have been measured on a Czochralski pulled Ba8Ga16Ge30 crystal. Complete transport properties obtained in the temperature range from 273K to 1150K. The physical properties are reproducible even after thermal cycling. The Seebeck coefficient reveals the sample to be an n-type conductor with a maximum value of -148 μV/K at 1073K. The electrical resistivity shows the characteristics of a heavily doped semi conductor, and it goes through a maximum at 1073 K with a value of 1.7 mΩ-cm. The thermal conductivity goes through a minimum of 1.25 W/m-K around 900K, and ZT reaches a maximum of 0.9 at 1000 K.

Original languageEnglish (US)
Title of host publicationProceedings ICT'06 - 25th International Conference on Thermoelectrics
Pages40-43
Number of pages4
DOIs
StatePublished - Dec 1 2006
EventICT'06 - 25th International Conference on Thermoelectrics - Vienna, Austria
Duration: Aug 6 2006Aug 10 2006

Other

OtherICT'06 - 25th International Conference on Thermoelectrics
Country/TerritoryAustria
CityVienna
Period8/6/068/10/06

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'High temperature thermoelectric properties of Czochralski-pulled Ba <sub>8</sub>Ga<sub>16</sub>Ge<sub>30</sub>'. Together they form a unique fingerprint.

Cite this