High temperature thermoelectric properties of Mo3Sb7-xTex for x = 1.6 and 1.5

Franck Gascoin*, Julia Rasmussen, G. Jeffrey Snyder

*Corresponding author for this work

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

We have prepared and measured the electrical resistivity, Seebeck coefficient and thermal conductivity of the titled compounds in the 300-1050 K temperature range. The results show that both members of the solid solution are heavily doped semiconductor with a figure of merit zT reaching 0.80 at 1050 K for x = 1.6. Higher values of x resulted in multi phase samples. The heavily doped semiconducting nature of the materials is consistent with theoretical predictions based on valence-electron count (VEC). The flexible nature of the crystalline structure, range of VEC attainable, and existence of intercalation sites are discussed as a way to enhance the thermoelectric properties of materials of this particular structure type.

Original languageEnglish (US)
Pages (from-to)324-329
Number of pages6
JournalJournal of Alloys and Compounds
Volume427
Issue number1-2
DOIs
StatePublished - Jan 16 2007

Keywords

  • Antimonides
  • Intermetallics
  • Thermoelectric

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High temperature thermoelectric properties of Mo<sub>3</sub>Sb<sub>7-x</sub>Te<sub>x</sub> for x = 1.6 and 1.5'. Together they form a unique fingerprint.

  • Cite this