High thermoelectric efficiency in lanthanum doped Yb14 Mn Sb11

Eric S. Toberer; Shawna R. Brown; Teruyuki Ikeda; Susan M. Kauzlarich; G. Jeffrey Snyder

doi:10.1063/1.2970089

High thermoelectric efficiency in lanthanum doped Yb14 Mn Sb11

Eric S. Toberer, Shawna R. Brown, Teruyuki Ikeda, Susan M. Kauzlarich, G. Jeffrey Snyder

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

108 Scopus citations

Abstract

Lanthanum doping of the high-temperature p -type thermoelectric material Yb14 Mn Sb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6 La0.4 Mn Sb11 are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb14 Mn1-x Alx Sb11. Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb14 Mn Sb11 -based materials.

Original language	English (US)
Article number	062110
Journal	Applied Physics Letters
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.2970089
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2970089

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title = "High thermoelectric efficiency in lanthanum doped Yb14 Mn Sb11",

abstract = "Lanthanum doping of the high-temperature p -type thermoelectric material Yb14 Mn Sb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6 La0.4 Mn Sb11 are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb14 Mn1-x Alx Sb11. Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb14 Mn Sb11 -based materials.",

author = "Toberer, {Eric S.} and Brown, {Shawna R.} and Teruyuki Ikeda and Kauzlarich, {Susan M.} and Snyder, {G. Jeffrey}",

note = "Funding Information: We thank NASA/JPL, the Beckman Foundation, and NSF (Contract No. DMR-0600742) for funding and B. C. Sales for useful discussions.",

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T1 - High thermoelectric efficiency in lanthanum doped Yb14 Mn Sb11

AU - Toberer, Eric S.

AU - Brown, Shawna R.

AU - Ikeda, Teruyuki

AU - Kauzlarich, Susan M.

AU - Snyder, G. Jeffrey

N1 - Funding Information: We thank NASA/JPL, the Beckman Foundation, and NSF (Contract No. DMR-0600742) for funding and B. C. Sales for useful discussions.

PY - 2008

Y1 - 2008

N2 - Lanthanum doping of the high-temperature p -type thermoelectric material Yb14 Mn Sb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6 La0.4 Mn Sb11 are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb14 Mn1-x Alx Sb11. Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb14 Mn Sb11 -based materials.

AB - Lanthanum doping of the high-temperature p -type thermoelectric material Yb14 Mn Sb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6 La0.4 Mn Sb11 are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb14 Mn1-x Alx Sb11. Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb14 Mn Sb11 -based materials.

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High thermoelectric efficiency in lanthanum doped Yb14 Mn Sb11

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