High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures

Hua Zhang*, Nabil A. Amro, Sandeep Disawal, Robert Elghanian, Roger Shile, Joseph Fragala

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

A new method that combines dip-pen nanolithography (DPN), wet-chemical etching (WCE), and reactive ion etching (RIE) to generate solid Si and SiO x nanostructures. High-throughput patterning of large-area nanostructure arrays is demonstrated using a multipen DPN technique. The obtained large-area Si nanostructured could be used as templates for nanoimprint lithography. The multipen DPN is employed to generate large-area Si nanostructure patterns in a high-throughput fashion. This method possesses several major advantages including versatility, high flexibility, and high throughput in pattering Si or SiOx nanostructures. The method can be used for fabricating high-quality Si nanostructures. It has significant potential for fabricating new types of MEMS, NEMS, or semiconductor devices.

Original languageEnglish (US)
Pages (from-to)81-85
Number of pages5
JournalSmall
Volume3
Issue number1
DOIs
StatePublished - Jan 1 2007

Keywords

  • Dip-pen nanolithography
  • Nanostructures
  • Reactive ion etching
  • Silicon
  • Wet-chemical etching

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Engineering (miscellaneous)

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