Abstract
Nb/Al/AlOx/Al/AlOx/Al/Nb junctions with critical current densities, jc, up to 38kA/cm2 were fabricated. A critical voltage of Vc=1.25mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for jc=21kA/cm2. Also, Nb/Al/AlOx/Al/Nb/Al/NbN junctions with jc=33kA/ cm2 and Vc=0.76mV were fabricated, where it is suggested that a second tunnel barrier at the Al/NbN interface is present as a result of Al nitridation during NbN deposition.
Original language | English (US) |
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Pages (from-to) | 1273-1275 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 7 |
DOIs | |
State | Published - Aug 12 2002 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)