High-transparency superconductor-insulator-normal- metal-insulator- superconductor Josephson junctions for digital electronics

I. P. Nevirkovets; J. B. Ketterson

doi:10.1063/1.1499768

High-transparency superconductor-insulator-normal- metal-insulator- superconductor Josephson junctions for digital electronics

I. P. Nevirkovets, J. B. Ketterson

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Nb/Al/AlO_x/Al/AlO_x/Al/Nb junctions with critical current densities, j_c, up to 38kA/cm² were fabricated. A critical voltage of V_c=1.25mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for j_c=21kA/cm². Also, Nb/Al/AlO_x/Al/Nb/Al/NbN junctions with j_c=33kA/ cm² and V_c=0.76mV were fabricated, where it is suggested that a second tunnel barrier at the Al/NbN interface is present as a result of Al nitridation during NbN deposition.

Original language	English (US)
Pages (from-to)	1273-1275
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	7
DOIs	https://doi.org/10.1063/1.1499768
State	Published - Aug 12 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1499768

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title = "High-transparency superconductor-insulator-normal- metal-insulator- superconductor Josephson junctions for digital electronics",

abstract = "Nb/Al/AlOx/Al/AlOx/Al/Nb junctions with critical current densities, jc, up to 38kA/cm2 were fabricated. A critical voltage of Vc=1.25mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for jc=21kA/cm2. Also, Nb/Al/AlOx/Al/Nb/Al/NbN junctions with jc=33kA/ cm2 and Vc=0.76mV were fabricated, where it is suggested that a second tunnel barrier at the Al/NbN interface is present as a result of Al nitridation during NbN deposition.",

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year = "2002",

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AU - Nevirkovets, I. P.

AU - Ketterson, J. B.

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N2 - Nb/Al/AlOx/Al/AlOx/Al/Nb junctions with critical current densities, jc, up to 38kA/cm2 were fabricated. A critical voltage of Vc=1.25mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for jc=21kA/cm2. Also, Nb/Al/AlOx/Al/Nb/Al/NbN junctions with jc=33kA/ cm2 and Vc=0.76mV were fabricated, where it is suggested that a second tunnel barrier at the Al/NbN interface is present as a result of Al nitridation during NbN deposition.

AB - Nb/Al/AlOx/Al/AlOx/Al/Nb junctions with critical current densities, jc, up to 38kA/cm2 were fabricated. A critical voltage of Vc=1.25mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for jc=21kA/cm2. Also, Nb/Al/AlOx/Al/Nb/Al/NbN junctions with jc=33kA/ cm2 and Vc=0.76mV were fabricated, where it is suggested that a second tunnel barrier at the Al/NbN interface is present as a result of Al nitridation during NbN deposition.

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