HIGH YIELD MANUFACTURE OF LOW THRESHOLD, HIGH RELIABILITY, 1. 30 mu m BURIED HETEROSTRUCTURE LASER DIODES BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION.

M. Krakowski*, R. Blondeau, J. Ricciardi, P. Hirtz, M. Razeghi, B. de Cremoux

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report the fabrication of very low threshold buried heterostructure lasers by a two-step MOCVD technique. We show very high uniformity of the initial characteristics and low degradation rate during the aging test.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherIstituto Int delle Comunicazioni
Pages81-84
Number of pages4
Volume3
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Engineering(all)

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