HIGH YIELD MANUFACTURE OF LOW THRESHOLD, HIGH RELIABILITY, 1. 30 mu m BURIED HETEROSTRUCTURE LASER DIODES BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION.

M. Krakowski; R. Blondeau; J. Ricciardi; P. Hirtz; M. Razeghi; B. de Cremoux

HIGH YIELD MANUFACTURE OF LOW THRESHOLD, HIGH RELIABILITY, 1. 30 mu m BURIED HETEROSTRUCTURE LASER DIODES BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION.

M. Krakowski^*, R. Blondeau, J. Ricciardi, P. Hirtz, M. Razeghi, B. de Cremoux

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We report the fabrication of very low threshold buried heterostructure lasers by a two-step MOCVD technique. We show very high uniformity of the initial characteristics and low degradation rate during the aging test.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	Istituto Int delle Comunicazioni
Pages	81-84
Number of pages	4
Volume	3
State	Published - Dec 1 1985

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{09d22bff12bd498bacd3e4e0d0577baf,

title = "HIGH YIELD MANUFACTURE OF LOW THRESHOLD, HIGH RELIABILITY, 1. 30 mu m BURIED HETEROSTRUCTURE LASER DIODES BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION.",

abstract = "We report the fabrication of very low threshold buried heterostructure lasers by a two-step MOCVD technique. We show very high uniformity of the initial characteristics and low degradation rate during the aging test.",

author = "M. Krakowski and R. Blondeau and J. Ricciardi and P. Hirtz and M. Razeghi and {de Cremoux}, B.",

year = "1985",

month = dec,

day = "1",

language = "English (US)",

volume = "3",

pages = "81--84",

booktitle = "Unknown Host Publication Title",

publisher = "Istituto Int delle Comunicazioni",

}

HIGH YIELD MANUFACTURE OF LOW THRESHOLD, HIGH RELIABILITY, 1. 30 mu m BURIED HETEROSTRUCTURE LASER DIODES BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION. / Krakowski, M.; Blondeau, R.; Ricciardi, J. et al.
Unknown Host Publication Title. Vol. 3 Istituto Int delle Comunicazioni, 1985. p. 81-84.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - HIGH YIELD MANUFACTURE OF LOW THRESHOLD, HIGH RELIABILITY, 1. 30 mu m BURIED HETEROSTRUCTURE LASER DIODES BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION.

AU - Krakowski, M.

AU - Blondeau, R.

AU - Ricciardi, J.

AU - Hirtz, P.

AU - Razeghi, M.

AU - de Cremoux, B.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - We report the fabrication of very low threshold buried heterostructure lasers by a two-step MOCVD technique. We show very high uniformity of the initial characteristics and low degradation rate during the aging test.

AB - We report the fabrication of very low threshold buried heterostructure lasers by a two-step MOCVD technique. We show very high uniformity of the initial characteristics and low degradation rate during the aging test.

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UR - http://www.scopus.com/inward/citedby.url?scp=0022277367&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022277367

VL - 3

SP - 81

EP - 84

BT - Unknown Host Publication Title

PB - Istituto Int delle Comunicazioni

ER -

HIGH YIELD MANUFACTURE OF LOW THRESHOLD, HIGH RELIABILITY, 1. 30 mu m BURIED HETEROSTRUCTURE LASER DIODES BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION.

Abstract

ASJC Scopus subject areas

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