Highly conductive bilayer transparent conducting oxide thin films for large-area organic photovoltaic cells

Jun Liu; Alexander W. Hains; Jonathan D. Servaites; Mark A. Ratner; Tobin J. Marks

doi:10.1021/cm902265n

Highly conductive bilayer transparent conducting oxide thin films for large-area organic photovoltaic cells

Jun Liu, Alexander W. Hains, Jonathan D. Servaites, Mark A. Ratner, Tobin J. Marks

Chemistry

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Highly conductive In-doped CdO/Sn-doped In₂O₃ (CIO/ITO) bilayer transparent conducting oxide (TCO) thin films were prepared by combining, in sequence, metal-organic chemical vapor deposition (MOCVD) and ion-assisted deposition (IAD) techniques. The bilayer substrates, with a low In content of ∼19 atom % and a low sheet resistance of only ∼4.9 ω/□, were investigated as anodes in the bulk-heterojunction (BHJ) organic photovoltaic (OPV) devices using poly(2-methoxy- 5-(3′,7′- dimethyloctyloxy)-1,4-phenylenevinylene) (MDMO-PPV):[6,6]-phenyl C₆₁ butyric acid methyl ester (PCBM) as the active layer. The bilayer anode OPVs of the current laboratory size (∼0.06 cm²) exhibit performance comparable to those of commercial ITO-based control devices. The effect of TCO conductivity on OPV performance in larger area devices is analyzed through a simulation model. The results reveal significant advantages of using the highly conductive bilayer TCO anodes for large-area OPV cells.

Original language	English (US)
Pages (from-to)	5258-5263
Number of pages	6
Journal	Chemistry of Materials
Volume	21
Issue number	21
DOIs	https://doi.org/10.1021/cm902265n
State	Published - Nov 10 2009

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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@article{cec56612626b4035be0743acf0e2e5f9,

title = "Highly conductive bilayer transparent conducting oxide thin films for large-area organic photovoltaic cells",

abstract = "Highly conductive In-doped CdO/Sn-doped In2O3 (CIO/ITO) bilayer transparent conducting oxide (TCO) thin films were prepared by combining, in sequence, metal-organic chemical vapor deposition (MOCVD) and ion-assisted deposition (IAD) techniques. The bilayer substrates, with a low In content of ∼19 atom % and a low sheet resistance of only ∼4.9 ω/□, were investigated as anodes in the bulk-heterojunction (BHJ) organic photovoltaic (OPV) devices using poly(2-methoxy- 5-(3′,7′- dimethyloctyloxy)-1,4-phenylenevinylene) (MDMO-PPV):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. The bilayer anode OPVs of the current laboratory size (∼0.06 cm2) exhibit performance comparable to those of commercial ITO-based control devices. The effect of TCO conductivity on OPV performance in larger area devices is analyzed through a simulation model. The results reveal significant advantages of using the highly conductive bilayer TCO anodes for large-area OPV cells.",

author = "Jun Liu and Hains, {Alexander W.} and Servaites, {Jonathan D.} and Ratner, {Mark A.} and Marks, {Tobin J.}",

year = "2009",

month = nov,

day = "10",

doi = "10.1021/cm902265n",

language = "English (US)",

volume = "21",

pages = "5258--5263",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "21",

}

TY - JOUR

T1 - Highly conductive bilayer transparent conducting oxide thin films for large-area organic photovoltaic cells

AU - Liu, Jun

AU - Hains, Alexander W.

AU - Servaites, Jonathan D.

AU - Ratner, Mark A.

AU - Marks, Tobin J.

PY - 2009/11/10

Y1 - 2009/11/10

N2 - Highly conductive In-doped CdO/Sn-doped In2O3 (CIO/ITO) bilayer transparent conducting oxide (TCO) thin films were prepared by combining, in sequence, metal-organic chemical vapor deposition (MOCVD) and ion-assisted deposition (IAD) techniques. The bilayer substrates, with a low In content of ∼19 atom % and a low sheet resistance of only ∼4.9 ω/□, were investigated as anodes in the bulk-heterojunction (BHJ) organic photovoltaic (OPV) devices using poly(2-methoxy- 5-(3′,7′- dimethyloctyloxy)-1,4-phenylenevinylene) (MDMO-PPV):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. The bilayer anode OPVs of the current laboratory size (∼0.06 cm2) exhibit performance comparable to those of commercial ITO-based control devices. The effect of TCO conductivity on OPV performance in larger area devices is analyzed through a simulation model. The results reveal significant advantages of using the highly conductive bilayer TCO anodes for large-area OPV cells.

AB - Highly conductive In-doped CdO/Sn-doped In2O3 (CIO/ITO) bilayer transparent conducting oxide (TCO) thin films were prepared by combining, in sequence, metal-organic chemical vapor deposition (MOCVD) and ion-assisted deposition (IAD) techniques. The bilayer substrates, with a low In content of ∼19 atom % and a low sheet resistance of only ∼4.9 ω/□, were investigated as anodes in the bulk-heterojunction (BHJ) organic photovoltaic (OPV) devices using poly(2-methoxy- 5-(3′,7′- dimethyloctyloxy)-1,4-phenylenevinylene) (MDMO-PPV):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. The bilayer anode OPVs of the current laboratory size (∼0.06 cm2) exhibit performance comparable to those of commercial ITO-based control devices. The effect of TCO conductivity on OPV performance in larger area devices is analyzed through a simulation model. The results reveal significant advantages of using the highly conductive bilayer TCO anodes for large-area OPV cells.

UR - http://www.scopus.com/inward/record.url?scp=72449140094&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72449140094&partnerID=8YFLogxK

U2 - 10.1021/cm902265n

DO - 10.1021/cm902265n

M3 - Article

AN - SCOPUS:72449140094

VL - 21

SP - 5258

EP - 5263

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 21

ER -