Abstract
We report a highly conductive gallium oxide doped with both silicon and indium grown on c-plane sapphire substrate by MOCVD. From a superlattice structure of indium oxide and gallium oxide doped with silicon, we obtained a highly conductive material with an electron hall mobility up to 150 cm2 /V·s with the carrier concentration near 2 × 1017 cm−3 . However, if not doped with silicon, both Ga2 O3:In and Ga2 O3 are highly resistive. Optical and structural characterization techniques such as X-ray, transmission electron microscope, and photoluminescence, reveal no significant incorporation of indium into the superlattice materials, which suggests the indium plays a role of a surfactant passivating electron trapping defect levels.
Original language | English (US) |
---|---|
Article number | 287 |
Pages (from-to) | 1-7 |
Number of pages | 7 |
Journal | Coatings |
Volume | 11 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2021 |
Funding
This work is supported by Air Force under agreement of FA9550-19-1-0410.
Keywords
- Doping with silicon
- Ga O polymorph
- High electrical performance
- MOCVD
- Metal oxide
ASJC Scopus subject areas
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry