Highly conductive co-doped ga2 o3:Si-in grown by mocvd

Junhee Lee, Honghyuk Kim, Lakshay Gautam, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report a highly conductive gallium oxide doped with both silicon and indium grown on c-plane sapphire substrate by MOCVD. From a superlattice structure of indium oxide and gallium oxide doped with silicon, we obtained a highly conductive material with an electron hall mobility up to 150 cm2 /V·s with the carrier concentration near 2 × 1017 cm−3 . However, if not doped with silicon, both Ga2 O3:In and Ga2 O3 are highly resistive. Optical and structural characterization techniques such as X-ray, transmission electron microscope, and photoluminescence, reveal no significant incorporation of indium into the superlattice materials, which suggests the indium plays a role of a surfactant passivating electron trapping defect levels.

Original languageEnglish (US)
Article number287
Pages (from-to)1-7
Number of pages7
JournalCoatings
Volume11
Issue number3
DOIs
StatePublished - Mar 2021

Keywords

  • Doping with silicon
  • Ga O polymorph
  • High electrical performance
  • MOCVD
  • Metal oxide

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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