Highly Oriented Low-Dimensional Tin Halide Perovskites with Enhanced Stability and Photovoltaic Performance

Yuqin Liao, Hefei Liu, Wenjia Zhou, Dongwen Yang, Yuequn Shang, Zhifang Shi, Binghan Li, Xianyuan Jiang, Lijun Zhang*, Li Na Quan, Rafael Quintero-Bermudez, Brandon R. Sutherland, Qixi Mi, Edward H. Sargent, Zhijun Ning

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

713 Scopus citations


The low toxicity and a near-ideal choice of bandgap make tin perovskite an attractive alternative to lead perovskite in low cost solar cells. However, the development of Sn perovskite solar cells has been impeded by their extremely poor stability when exposed to oxygen. We report low-dimensional Sn perovskites that exhibit markedly enhanced air stability in comparison with their 3D counterparts. The reduced degradation under air exposure is attributed to the improved thermodynamic stability after dimensional reduction, the encapsulating organic ligands, and the compact perovskite film preventing oxygen ingress. We then explore these highly oriented low-dimensional Sn perovskite films in solar cells. The perpendicular growth of the perovskite domains between electrodes allows efficient charge carrier transport, leading to power conversion efficiencies of 5.94% without the requirement of further device structure engineering. We tracked the performance of unencapsulated devices over 100 h and found no appreciable decay in efficiency. These findings raise the prospects of pure Sn perovskites for solar cells application.

Original languageEnglish (US)
Pages (from-to)6693-6699
Number of pages7
JournalJournal of the American Chemical Society
Issue number19
StatePublished - May 17 2017

ASJC Scopus subject areas

  • General Chemistry
  • Biochemistry
  • Catalysis
  • Colloid and Surface Chemistry


Dive into the research topics of 'Highly Oriented Low-Dimensional Tin Halide Perovskites with Enhanced Stability and Photovoltaic Performance'. Together they form a unique fingerprint.

Cite this