Highly Polarized Photoelectrical Response in vdW ZrS3 Nanoribbons

Xiaoting Wang, Kedi Wu, Mark Blei, Yang Wang, Longfei Pan, Kai Zhao, Chongxin Shan, Ming Lei, Yu Cui, Bin Chen, David Wright, Weida Hu*, Sefaattin Tongay, Zhongming Wei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

2D anisotropic materials, such as black phosphorus, ReS2, and GaTe, have been shown to exhibit exciting direction- and polarization-sensitive material properties. Highly crystalline chemical-vapor-transport-grown ZrS3 crystals exhibit large optical-absorption-coefficient anisotropy, which doubles under resonance conditions. The observed optical anisotropy manifests itself in angle-resolved photocurrent density polar plots with dichroic ratio (Ipb/Ipa) of 1.73 excited by a laser source of λ = 450 nm and 1.14 by λ = 532 nm. The optical absorption and electronic dichroic response are fully explained through detailed band structure and polarization-sensitive optical-absorption-spectrum calculations. Not only is the family of 2D anisotropic semiconductors expanded into Zr-based trichalcogenides but fundamental insights on how crystalline anisotropy, optical absorption dichroism, and generated photocurrents are interrelated in van der Waals Zr-based trichalcogenides materials are also provided.

Original languageEnglish (US)
Article number1900419
JournalAdvanced Electronic Materials
Volume5
Issue number7
DOIs
StatePublished - Jul 2019

Keywords

  • 2D anisotropic semiconductors
  • angle-resolved absorption
  • dichroic response
  • quasi-1D materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Highly Polarized Photoelectrical Response in vdW ZrS3 Nanoribbons'. Together they form a unique fingerprint.

Cite this