Highly sensitive InP-based phase modulators based on stepped quantum wells

H. Mohseni*, H. An, Z. Shellenbarger, M. H. Kwakernaak, A. Lepore, J. H. Abeles

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The highly sensitive InP-based phase modulators based on stepped quantum wells are discussed. Optical absorption coefficient and change of index of the modulators are measured using the optical transmission, modulator's photoresponse and Fabry-Perot oscillation shifts. It is found that solid lines are also calculated. The results show that the change of index of the square quantum wells for absorption coefficient below 1 cm-1 is about ∼1×10-4/V.

Original languageEnglish (US)
Pages (from-to)560-561
Number of pages2
JournalOSA Trends in Optics and Photonics Series
Volume88
StatePublished - Jan 1 2003
EventConference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States
Duration: Jun 1 2003Jun 6 2003

ASJC Scopus subject areas

  • Engineering(all)

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