High‐Temperature Defect Structure of Lanthanum Cuprate

M. ‐Y Su; E. A. Cooper; C. E. Elsbernd; Thomas O Mason

doi:10.1111/j.1151-2916.1990.tb06474.x

High‐Temperature Defect Structure of Lanthanum Cuprate

M. ‐Y Su^*, E. A. Cooper, C. E. Elsbernd, Thomas O Mason

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

High‐temperature (650° to 8507deg;C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high‐temperature electron hole mobility and density‐of‐states were estimated.

Original language	English (US)
Pages (from-to)	3453-3456
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	73
Issue number	11
DOIs	https://doi.org/10.1111/j.1151-2916.1990.tb06474.x
State	Published - Jan 1 1990

Keywords

cuprates
defects
lanthanum
models
superconductors

ASJC Scopus subject areas

Ceramics and Composites
Geology
Geochemistry and Petrology
Materials Chemistry

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abstract = "High‐temperature (650° to 8507deg;C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high‐temperature electron hole mobility and density‐of‐states were estimated.",

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AU - Cooper, E. A.

AU - Elsbernd, C. E.

AU - Mason, Thomas O

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Y1 - 1990/1/1

N2 - High‐temperature (650° to 8507deg;C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high‐temperature electron hole mobility and density‐of‐states were estimated.

AB - High‐temperature (650° to 8507deg;C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high‐temperature electron hole mobility and density‐of‐states were estimated.

KW - cuprates

KW - defects

KW - lanthanum

KW - models

KW - superconductors

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