High‐Temperature Defect Structure of Lanthanum Cuprate

M. ‐Y Su*, E. A. Cooper, C. E. Elsbernd, Thomas O Mason

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


High‐temperature (650° to 8507deg;C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high‐temperature electron hole mobility and density‐of‐states were estimated.

Original languageEnglish (US)
Pages (from-to)3453-3456
Number of pages4
JournalJournal of the American Ceramic Society
Issue number11
StatePublished - Jan 1 1990


  • cuprates
  • defects
  • lanthanum
  • models
  • superconductors

ASJC Scopus subject areas

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry


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