Hopping conduction in strongly insulating states of a diffusive bent quantum Hall junction

L. Steinke*, D. Schuh, M. Bichler, G. Abstreiter, M. Grayson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Transport studies of a bent quantum Hall junction at integer filling factor ν show strongly insulating states (ν=1,2) at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias Vdc in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction G∼exp [- (T0 T) 1/2] at lower T. The base temperature electric-field dependence shows I (E) ∼exp [- (E0 E) 1/2], consistent with one-dimensional (1D) variable-range hopping conduction. We observe almost identical behavior at ν=1 and ν=2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hopping, which either include or ignore interactions are compared all of which are consistent with the basic model of disorder coupled counterpropagating quantum Hall edges.

Original languageEnglish (US)
Article number235319
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number23
DOIs
StatePublished - Jun 23 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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