Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Chengmei Zhong; Vinod K. Sangwan; Joohoon Kang; Jan Luxa; Zdeněk Sofer; Mark C. Hersam; Emily A. Weiss

doi:10.1021/acs.jpclett.8b03543

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Chengmei Zhong, Vinod K. Sangwan, Joohoon Kang, Jan Luxa, Zdeněk Sofer, Mark C. Hersam^*, Emily A. Weiss

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured with femtosecond transient reflection spectroscopy. The hot carrier cooling process is found to occur through phonon scattering. The surface recombination velocity and ambipolar diffusion coefficient are extracted from fits to the pump energy-dependent transient reflection kinetics using a free carrier diffusion model. The extracted surface recombination velocity is approximately an order of magnitude larger than that for methylammonium lead-iodide perovskites, suggesting that surface recombination is a principal source of photocarrier loss in InSe. The extracted ambipolar diffusion coefficient is consistent with previously reported values of InSe carrier mobility.

Original language	English (US)
Pages (from-to)	493-499
Number of pages	7
Journal	Journal of Physical Chemistry Letters
Volume	10
Issue number	3
DOIs	https://doi.org/10.1021/acs.jpclett.8b03543
State	Published - Feb 7 2019

Funding

This research was supported by the Materials Research Science and Engineering Center (MRSEC) of Northwestern University (NSF DMR-1720139) (spectroscopy) and the Center for Light Energy Activated Redox Processes (LEAP), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0001059 (sample preparation and characterization). Z.S. and J.L. were supported by the Czech Science Foundation (GACR No. 17-11456S), Neuron Foundation for scientific support, and by the project Advanced Functional Nanorobots (Reg. No. CZ.02.1.01/0.0/0.0/15_003/0000444 financed by the EFRR).

ASJC Scopus subject areas

General Materials Science
Physical and Theoretical Chemistry

Access to Document

10.1021/acs.jpclett.8b03543

Cite this

@article{ed0f72bc26aa40b189b8afaed94c0a72,

title = "Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals",

abstract = "Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured with femtosecond transient reflection spectroscopy. The hot carrier cooling process is found to occur through phonon scattering. The surface recombination velocity and ambipolar diffusion coefficient are extracted from fits to the pump energy-dependent transient reflection kinetics using a free carrier diffusion model. The extracted surface recombination velocity is approximately an order of magnitude larger than that for methylammonium lead-iodide perovskites, suggesting that surface recombination is a principal source of photocarrier loss in InSe. The extracted ambipolar diffusion coefficient is consistent with previously reported values of InSe carrier mobility.",

author = "Chengmei Zhong and Sangwan, {Vinod K.} and Joohoon Kang and Jan Luxa and Zden{\v e}k Sofer and Hersam, {Mark C.} and Weiss, {Emily A.}",

note = "Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = feb,

day = "7",

doi = "10.1021/acs.jpclett.8b03543",

language = "English (US)",

volume = "10",

pages = "493--499",

journal = "Journal of Physical Chemistry Letters",

issn = "1948-7185",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

AU - Zhong, Chengmei

AU - Sangwan, Vinod K.

AU - Kang, Joohoon

AU - Luxa, Jan

AU - Sofer, Zdeněk

AU - Hersam, Mark C.

AU - Weiss, Emily A.

PY - 2019/2/7

Y1 - 2019/2/7

N2 - Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured with femtosecond transient reflection spectroscopy. The hot carrier cooling process is found to occur through phonon scattering. The surface recombination velocity and ambipolar diffusion coefficient are extracted from fits to the pump energy-dependent transient reflection kinetics using a free carrier diffusion model. The extracted surface recombination velocity is approximately an order of magnitude larger than that for methylammonium lead-iodide perovskites, suggesting that surface recombination is a principal source of photocarrier loss in InSe. The extracted ambipolar diffusion coefficient is consistent with previously reported values of InSe carrier mobility.

AB - Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured with femtosecond transient reflection spectroscopy. The hot carrier cooling process is found to occur through phonon scattering. The surface recombination velocity and ambipolar diffusion coefficient are extracted from fits to the pump energy-dependent transient reflection kinetics using a free carrier diffusion model. The extracted surface recombination velocity is approximately an order of magnitude larger than that for methylammonium lead-iodide perovskites, suggesting that surface recombination is a principal source of photocarrier loss in InSe. The extracted ambipolar diffusion coefficient is consistent with previously reported values of InSe carrier mobility.

UR - http://www.scopus.com/inward/record.url?scp=85060317237&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060317237&partnerID=8YFLogxK

U2 - 10.1021/acs.jpclett.8b03543

DO - 10.1021/acs.jpclett.8b03543

M3 - Article

C2 - 30642181

AN - SCOPUS:85060317237

SN - 1948-7185

VL - 10

SP - 493

EP - 499

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

IS - 3

ER -

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Abstract

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this