Hybrid green LEDs based on n-ZnO/(InGaN/GaN)multi-quantum-wells/p-GaN

C. Bayram, F. Hosseini Teherani, D. J. Rogers, M. Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallographic quality was preserved after the n-ZnO growth. LEDs showed a turn-on voltage of 2.5 V and a room temperature electroluminescence (EL) centered at 510 nm. A blueshift and narrowing of the EL peak with increasing current was attributed to bandgap renormalization. The results indicate that hybrid LED structures could hold the prospect for the development of green LEDs with superior performance.

Original languageEnglish (US)
Title of host publicationZinc Oxide Materials and Devices IV
StatePublished - 2009
EventZinc Oxide Materials and Devices IV - San Jose, CA, United States
Duration: Jan 25 2009Jan 28 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherZinc Oxide Materials and Devices IV
Country/TerritoryUnited States
CitySan Jose, CA


  • Green light-emitting diode
  • InGaN/GaN multi-quantum wells
  • Metalorganic chemical vapor deposition
  • Pulsed laser deposition
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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