INIS
gallium nitrides
100%
light emitting diodes
66%
zinc oxides
66%
layers
50%
growth
33%
performance
33%
hybrids
25%
lasers
16%
deposition
16%
organometallic compounds
16%
chemical vapor deposition
16%
lifetime
8%
engineering
8%
stability
8%
range
8%
crystallography
8%
x-ray diffraction
8%
devices
8%
fabrication
8%
applications
8%
substrates
8%
emission
8%
leaks
8%
voltage
8%
eyes
8%
wavelengths
8%
solar cells
8%
crystal structure
8%
heterojunctions
8%
quantum wells
8%
p-n junctions
8%
thermal expansion
8%
i-v characteristic
8%
electroluminescence
8%
Chemistry
Green
50%
Structure
25%
Band Gap
16%
Pulsed Laser Deposition
16%
X-Ray Diffraction
16%
Reaction Temperature
16%
Crystal Structure
8%
Voltage
8%
Thermal Stability
8%
Solar Cell
8%
Wavelength
8%
Thermal Expansion Coefficient
8%
UV/VIS Spectroscopy
8%
Alloying
8%
Electroluminescence
8%
Application
8%
Device
8%
Doping
8%
Leak
8%
Material Science
ZnO
66%
Light-Emitting Diode
66%
Metal-Organic Chemical Vapor Deposition
33%
Material
16%
Heterojunction
8%
Quantum Well
8%
Crystal Structure
8%
Current-Voltage Characteristic
8%