Hydrogen plasma etching of GaAs oxide

R. P H Chang*, S. Darack

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


Hydrogen plasma has been used to etch native-grown GaAs oxide on GaAs substrates. It is found that the rate of etching increases with gas pressure (in the range 10-300 μ) and the rf power (in the range 10-400 W) of the discharge. A typical etch rate of ≊20 Å/sec can be easily achieved. The selectivity (determined by scanning electron microscopy) of the oxide etch over the substrate is ≊2. An etch mechanism is proposed, and the use of hydrogen plasma for surface preparation of GaAs and the etching of oxides on other semiconductor materials will be discussed.

Original languageEnglish (US)
Pages (from-to)898-899
Number of pages2
JournalApplied Physics Letters
Issue number11
StatePublished - 1981

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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