Abstract
Hydrogen plasma has been used to etch native-grown GaAs oxide on GaAs substrates. It is found that the rate of etching increases with gas pressure (in the range 10-300 μ) and the rf power (in the range 10-400 W) of the discharge. A typical etch rate of ≊20 Å/sec can be easily achieved. The selectivity (determined by scanning electron microscopy) of the oxide etch over the substrate is ≊2. An etch mechanism is proposed, and the use of hydrogen plasma for surface preparation of GaAs and the etching of oxides on other semiconductor materials will be discussed.
Original language | English (US) |
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Pages (from-to) | 898-899 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 38 |
Issue number | 11 |
DOIs | |
State | Published - 1981 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)