TY - JOUR
T1 - HYDROGEN PLASMA ETCHING OF SEMICONDUCTORS AND THEIR OXIDES.
AU - Chang, R. P H
AU - Chang, C. C.
AU - Darack, S.
PY - 1982
Y1 - 1982
N2 - Hydrogen plasmas were used to etch surfaces of semiconducting materials (e. g. , GaAs, GaSb, InP, Si), their oxides, and Si nitride. Using a combination of analytical techniques - spectroscopic ellipsometry, Auger spectroscopy, and scanning electron microscopy (SEM), the etch rates, the surface composition and morphology have been studied. It is demonstrated that the selective etching rate of hydrogen plasma for Si over SiO//2 is approximately 30, and that for GaAs oxide over GaAs is approximately 2. It is also shown that the hydrogen plasma etched (and air exposed) GaAs surfaces have a Ga/As concentration ratio nearly equal to that of the air cleaved GaAs surface. Similar results have also been obtained for GaSb. Hydrogen plasma etched InP shows surface segregation and is rich in In.
AB - Hydrogen plasmas were used to etch surfaces of semiconducting materials (e. g. , GaAs, GaSb, InP, Si), their oxides, and Si nitride. Using a combination of analytical techniques - spectroscopic ellipsometry, Auger spectroscopy, and scanning electron microscopy (SEM), the etch rates, the surface composition and morphology have been studied. It is demonstrated that the selective etching rate of hydrogen plasma for Si over SiO//2 is approximately 30, and that for GaAs oxide over GaAs is approximately 2. It is also shown that the hydrogen plasma etched (and air exposed) GaAs surfaces have a Ga/As concentration ratio nearly equal to that of the air cleaved GaAs surface. Similar results have also been obtained for GaSb. Hydrogen plasma etched InP shows surface segregation and is rich in In.
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U2 - 10.1116/1.571307
DO - 10.1116/1.571307
M3 - Article
AN - SCOPUS:0019930821
SN - 0022-5355
VL - 20
SP - 45
EP - 50
JO - Journal of vacuum science & technology
JF - Journal of vacuum science & technology
IS - 1
ER -