Hysteresis in single-layer MoS 2 field effect transistors

Dattatray J. Late, Bin Liu, H. S.S.Ramakrishna Matte, Vinayak P. Dravid*, C. N.R. Rao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

774 Scopus citations


Figure Persented: Field effect transistors using ultrathin molybdenum disulfide (MoS 2) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS 2 devices measured under ambient environment. Here, we report the origin of their hysteretic and transient behaviors and suggest that hysteresis of MoS 2 field effect transistors is largely due to absorption of moisture on the surface and intensified by high photosensitivity of MoS 2. Uniform encapsulation of MoS 2 transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.

Original languageEnglish (US)
Pages (from-to)5635-5641
Number of pages7
JournalACS nano
Issue number6
StatePublished - Jun 26 2012


  • field effect transistor
  • hysteresis
  • moisture
  • molybdenum disulfide
  • photosensitivity
  • silicon nitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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