Identification of deep radiative levels in VPE ZnSe

K. A. Christianson; B. W. Wessels

doi:10.1016/0022-2313(84)90318-1

Identification of deep radiative levels in VPE ZnSe

K. A. Christianson^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The defect centers responsible for both the shallow and deep level emissions commonly seen in the photoluminescence spectra of high purity vapor phase epitaxially grown ZnSe have been investigated. The donor-acceptor pair emission at 2.681 eV has been associated with hole traps at 90 and 130 meV above the valence band edge as measured by optical transient capacitance spectroscopy. From the analysis of low temperature photoluminescence the traps are attributed to sodium. Photoluminescence emission at 1.94 eV has been correlated with a deep level at E_c- 2.25 eV as observed by steady state photocapacitance spectroscopy. Electron irradiation of the ZnSe thin films support the association of the defect centers responsible for 1.94 eV emission with the self-activated complex.

Original language	English (US)
Pages (from-to)	433-435
Number of pages	3
Journal	Journal of Luminescence
Volume	31-32
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-2313(84)90318-1
State	Published - Dec 1984

Funding

This work was supported by the Department of Energy, under contract

ASJC Scopus subject areas

Biophysics
Atomic and Molecular Physics, and Optics
General Chemistry
Biochemistry
Condensed Matter Physics

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10.1016/0022-2313(84)90318-1

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title = "Identification of deep radiative levels in VPE ZnSe",

abstract = "The defect centers responsible for both the shallow and deep level emissions commonly seen in the photoluminescence spectra of high purity vapor phase epitaxially grown ZnSe have been investigated. The donor-acceptor pair emission at 2.681 eV has been associated with hole traps at 90 and 130 meV above the valence band edge as measured by optical transient capacitance spectroscopy. From the analysis of low temperature photoluminescence the traps are attributed to sodium. Photoluminescence emission at 1.94 eV has been correlated with a deep level at Ec- 2.25 eV as observed by steady state photocapacitance spectroscopy. Electron irradiation of the ZnSe thin films support the association of the defect centers responsible for 1.94 eV emission with the self-activated complex.",

author = "Christianson, {K. A.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported by the Department of Energy, under contract",

year = "1984",

month = dec,

doi = "10.1016/0022-2313(84)90318-1",

language = "English (US)",

volume = "31-32",

pages = "433--435",

journal = "Journal of Luminescence",

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publisher = "Elsevier B.V.",

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T1 - Identification of deep radiative levels in VPE ZnSe

AU - Christianson, K. A.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported by the Department of Energy, under contract

PY - 1984/12

Y1 - 1984/12

N2 - The defect centers responsible for both the shallow and deep level emissions commonly seen in the photoluminescence spectra of high purity vapor phase epitaxially grown ZnSe have been investigated. The donor-acceptor pair emission at 2.681 eV has been associated with hole traps at 90 and 130 meV above the valence band edge as measured by optical transient capacitance spectroscopy. From the analysis of low temperature photoluminescence the traps are attributed to sodium. Photoluminescence emission at 1.94 eV has been correlated with a deep level at Ec- 2.25 eV as observed by steady state photocapacitance spectroscopy. Electron irradiation of the ZnSe thin films support the association of the defect centers responsible for 1.94 eV emission with the self-activated complex.

AB - The defect centers responsible for both the shallow and deep level emissions commonly seen in the photoluminescence spectra of high purity vapor phase epitaxially grown ZnSe have been investigated. The donor-acceptor pair emission at 2.681 eV has been associated with hole traps at 90 and 130 meV above the valence band edge as measured by optical transient capacitance spectroscopy. From the analysis of low temperature photoluminescence the traps are attributed to sodium. Photoluminescence emission at 1.94 eV has been correlated with a deep level at Ec- 2.25 eV as observed by steady state photocapacitance spectroscopy. Electron irradiation of the ZnSe thin films support the association of the defect centers responsible for 1.94 eV emission with the self-activated complex.

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VL - 31-32

SP - 433

EP - 435

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - PART 1

ER -

Identification of deep radiative levels in VPE ZnSe

Abstract

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