III-N-V: A novel material system for lasers with good high-temperature characteristics

C. W. Tu*, W. G. Bi, H. P. Xin, Y. Ma, J. P. Zhang, L. W. Wang, S. T. Ho

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


We have obtained GaInNAs/GaAs quantum wells with emission at 1.3 μm at room temperature. We also show that another novel material InNAsP grown on InP is a viable material for long-wavelength lasers. The maximum temperature of operation for an InNAsP/GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs/GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.

Original languageEnglish (US)
Pages (from-to)190-196
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1998
EventIn-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States
Duration: Jan 26 1998Jan 28 1998


  • GaInNAs
  • III-V compound semiconductors
  • InNAsP
  • Microdisk laser
  • Nitrogen

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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