III-N-V: A novel material system for lasers with good high-temperature characteristics

C. W. Tu; W. G. Bi; H. P. Xin; Y. Ma; J. P. Zhang; L. W. Wang; S. T. Ho

doi:10.1117/12.304444

III-N-V: A novel material system for lasers with good high-temperature characteristics

C. W. Tu^*, W. G. Bi, H. P. Xin, Y. Ma, J. P. Zhang, L. W. Wang, S. T. Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We have obtained GaInNAs/GaAs quantum wells with emission at 1.3 μm at room temperature. We also show that another novel material InNAsP grown on InP is a viable material for long-wavelength lasers. The maximum temperature of operation for an InNAsP/GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs/GaInAsP. The characteristic temperature T_o of the former is 97 K, also higher than that of the latter.

Original language	English (US)
Pages (from-to)	190-196
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3284
DOIs	https://doi.org/10.1117/12.304444
State	Published - 1998
Event	In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States Duration: Jan 26 1998 → Jan 28 1998

Keywords

GaInNAs
III-V compound semiconductors
InNAsP
Microdisk laser
Nitrogen

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.304444

Cite this

@article{d630007947bd4fc29d6a8112420706c6,

title = "III-N-V: A novel material system for lasers with good high-temperature characteristics",

abstract = "We have obtained GaInNAs/GaAs quantum wells with emission at 1.3 μm at room temperature. We also show that another novel material InNAsP grown on InP is a viable material for long-wavelength lasers. The maximum temperature of operation for an InNAsP/GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs/GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.",

keywords = "GaInNAs, III-V compound semiconductors, InNAsP, Microdisk laser, Nitrogen",

author = "Tu, {C. W.} and Bi, {W. G.} and Xin, {H. P.} and Y. Ma and Zhang, {J. P.} and Wang, {L. W.} and Ho, {S. T.}",

year = "1998",

doi = "10.1117/12.304444",

language = "English (US)",

volume = "3284",

pages = "190--196",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II ; Conference date: 26-01-1998 Through 28-01-1998",

}

TY - JOUR

T1 - III-N-V

T2 - In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II

AU - Tu, C. W.

AU - Bi, W. G.

AU - Xin, H. P.

AU - Ma, Y.

AU - Zhang, J. P.

AU - Wang, L. W.

AU - Ho, S. T.

PY - 1998

Y1 - 1998

N2 - We have obtained GaInNAs/GaAs quantum wells with emission at 1.3 μm at room temperature. We also show that another novel material InNAsP grown on InP is a viable material for long-wavelength lasers. The maximum temperature of operation for an InNAsP/GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs/GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.

AB - We have obtained GaInNAs/GaAs quantum wells with emission at 1.3 μm at room temperature. We also show that another novel material InNAsP grown on InP is a viable material for long-wavelength lasers. The maximum temperature of operation for an InNAsP/GaInAsP microdisk laser is 70 °C, which is about 120 °C higher than that of a similar laser fabricated from GaInAs/GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.

KW - GaInNAs

KW - III-V compound semiconductors

KW - InNAsP

KW - Microdisk laser

KW - Nitrogen

UR - http://www.scopus.com/inward/record.url?scp=0032223961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032223961&partnerID=8YFLogxK

U2 - 10.1117/12.304444

DO - 10.1117/12.304444

M3 - Conference article

AN - SCOPUS:0032223961

SN - 0277-786X

VL - 3284

SP - 190

EP - 196

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 26 January 1998 through 28 January 1998

ER -

III-N-V: A novel material system for lasers with good high-temperature characteristics

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this