III-nitride avalanche photodiodes

Patrick Kung*, Ryan McClmtock, Jose Luis Pau Vizcaino, Kathryn Minder, Can Bayram, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations


Wide bandgap III-Nitride semiconductors are a promising material system for the development of ultraviolet avalanche photodiodes (APDs) that could be a viable alternative to photomultiplier tubes. In this paper, we report the epitaxial growth and physical properties of device quality GaN layers on high quality AlN templates for the first back-illuminated GaN p-i-n APD structures on transparent sapphire substrates. The 25 μm × 25 μm device characteristics were measured, and compared with the same devices grown on GaN templates, under low bias and linear mode avalanche operation where they exhibited gains near 1500 after undergoing avalanche breakdown. The breakdown electric field in GaN was determined to be 2.73 MV/cm. The hole impact ionization coefficients were shown to be greater than those of electrons. These APDs were also successfully operated under Geiger mode.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices IV
StatePublished - 2007
EventQuantum Sensing and Nanophotonic Devices IV - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherQuantum Sensing and Nanophotonic Devices IV
Country/TerritoryUnited States
CitySan Jose, CA


  • APD
  • Avalanche
  • Back-illuminated
  • GaN
  • Impact ionization coefficients
  • Photodiode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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