III-nitride optoelectronic devices are discussed. Ultraviolet detectors and visible emitters towards terahertz intersubband devices are reported. Demonstration of single photon detection efficiencies of 33% in the ultraviolet regime, intersubband energy levels as low as in the mid-infrared regime, and GaN-based resonant tunneling diodes with negative resistance of 67 Ω are demonstrated.
|Original language||English (US)|
|Title of host publication||2010 23rd Annual Meeting of the IEEE Photonics Society|
|Number of pages||2|
|State||Published - 2010|