III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices

Manijeh Razeghi, C. Bayram, Z. Vashaei, E. Cicek, Ryan P McClintock

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

III-nitride optoelectronic devices are discussed. Ultraviolet detectors and visible emitters towards terahertz intersubband devices are reported. Demonstration of single photon detection efficiencies of 33% in the ultraviolet regime, intersubband energy levels as low as in the mid-infrared regime, and GaN-based resonant tunneling diodes with negative resistance of 67 Ω are demonstrated.
Original languageEnglish (US)
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society
PublisherIEEE
Pages351-352
Number of pages2
ISBN (Print)978-1424453689
StatePublished - 2010

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