III-V monolithic resonant photoreceiver on silicon substrate for long wavelength operation

S. Aboulhouda; M. Razeghi; J. P. Vilcot; D. Decoster; M. Francois; S. Maricot

doi:10.1117/12.24561

III-V monolithic resonant photoreceiver on silicon substrate for long wavelength operation

S. Aboulhouda^*, M. Razeghi, J. P. Vilcot, D. Decoster, M. Francois, S. Maricot

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We give the first demonstration of fabrication of a monolithic photoreceiver using selective growth and lattice mismatch heteroepitaxies. The photoreceiver includes a GaInAs/GaAs M̄.S.M. photodetector, a GaAs MESFET and a serial inductor which achieves a resonant effect. A dielectric mask was used to selectively grow the GaInAs/GaAs heteroepitaxies on the GaAs epilayers which, themselves, have been grown on a Silicon substrate. In comparison with a PIN photodiode loaded with a 50ω resistor, approximately 10 dB gain has been obtained at 7 GHz.

Original language	English (US)
Pages (from-to)	494-498
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1362
Issue number	pt 1
DOIs	https://doi.org/10.1117/12.24561
State	Published - 1991
Event	Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Aachen, Ger Duration: Oct 28 1990 → Nov 2 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.24561

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title = "III-V monolithic resonant photoreceiver on silicon substrate for long wavelength operation",

abstract = "We give the first demonstration of fabrication of a monolithic photoreceiver using selective growth and lattice mismatch heteroepitaxies. The photoreceiver includes a GaInAs/GaAs {\=M}.S.M. photodetector, a GaAs MESFET and a serial inductor which achieves a resonant effect. A dielectric mask was used to selectively grow the GaInAs/GaAs heteroepitaxies on the GaAs epilayers which, themselves, have been grown on a Silicon substrate. In comparison with a PIN photodiode loaded with a 50ω resistor, approximately 10 dB gain has been obtained at 7 GHz.",

author = "S. Aboulhouda and M. Razeghi and Vilcot, {J. P.} and D. Decoster and M. Francois and S. Maricot",

year = "1991",

doi = "10.1117/12.24561",

language = "English (US)",

volume = "1362",

pages = "494--498",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

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note = "Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications ; Conference date: 28-10-1990 Through 02-11-1990",

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TY - JOUR

T1 - III-V monolithic resonant photoreceiver on silicon substrate for long wavelength operation

AU - Aboulhouda, S.

AU - Razeghi, M.

AU - Vilcot, J. P.

AU - Decoster, D.

AU - Francois, M.

AU - Maricot, S.

PY - 1991

Y1 - 1991

N2 - We give the first demonstration of fabrication of a monolithic photoreceiver using selective growth and lattice mismatch heteroepitaxies. The photoreceiver includes a GaInAs/GaAs M̄.S.M. photodetector, a GaAs MESFET and a serial inductor which achieves a resonant effect. A dielectric mask was used to selectively grow the GaInAs/GaAs heteroepitaxies on the GaAs epilayers which, themselves, have been grown on a Silicon substrate. In comparison with a PIN photodiode loaded with a 50ω resistor, approximately 10 dB gain has been obtained at 7 GHz.

AB - We give the first demonstration of fabrication of a monolithic photoreceiver using selective growth and lattice mismatch heteroepitaxies. The photoreceiver includes a GaInAs/GaAs M̄.S.M. photodetector, a GaAs MESFET and a serial inductor which achieves a resonant effect. A dielectric mask was used to selectively grow the GaInAs/GaAs heteroepitaxies on the GaAs epilayers which, themselves, have been grown on a Silicon substrate. In comparison with a PIN photodiode loaded with a 50ω resistor, approximately 10 dB gain has been obtained at 7 GHz.

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DO - 10.1117/12.24561

M3 - Conference article

AN - SCOPUS:0025899814

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VL - 1362

SP - 494

EP - 498

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - pt 1

T2 - Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

Y2 - 28 October 1990 through 2 November 1990

ER -

III-V monolithic resonant photoreceiver on silicon substrate for long wavelength operation

Abstract

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