III-V monolithic resonant photoreceiver on silicon substrate for long wavelength operation

S. Aboulhouda*, M. Razeghi, J. P. Vilcot, D. Decoster, M. Francois, S. Maricot

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We give the first demonstration of fabrication of a monolithic photoreceiver using selective growth and lattice mismatch heteroepitaxies. The photoreceiver includes a GaInAs/GaAs M̄.S.M. photodetector, a GaAs MESFET and a serial inductor which achieves a resonant effect. A dielectric mask was used to selectively grow the GaInAs/GaAs heteroepitaxies on the GaAs epilayers which, themselves, have been grown on a Silicon substrate. In comparison with a PIN photodiode loaded with a 50ω resistor, approximately 10 dB gain has been obtained at 7 GHz.

Original languageEnglish (US)
Pages (from-to)494-498
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Issue numberpt 1
StatePublished - 1991
EventPhysical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Aachen, Ger
Duration: Oct 28 1990Nov 2 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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