It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long‐wavelength metal‐semiconductor‐metal photodetector, a GaAs MESFET preamplifier, and an inductor. The GaAs/GalnAs heteroepitaxy needed for the photodetector was selectively grown using a SiO2 mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50‐Ω resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link.
- Monolithic Circuits
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering