III‐V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

S. Aboulhouda*, J. P. Vilcot, M. Razeghi, D. Decoster, M. Francois, S. Maricot, A. Aboudou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long‐wavelength metal‐semiconductor‐metal photodetector, a GaAs MESFET preamplifier, and an inductor. The GaAs/GalnAs heteroepitaxy needed for the photodetector was selectively grown using a SiO2 mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50‐Ω resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link.

Original languageEnglish (US)
Pages (from-to)217-219
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume4
Issue number6
DOIs
StatePublished - Jan 1 1991

Keywords

  • MESFETs
  • Monolithic Circuits
  • optoelectronics
  • photoreceivers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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