Imaging the dimers in Si(111) 7×7

Laurence Marks*, E. Bengu, R. Plass, T. Ichimiya, P. M. Ajayan, S. Iijima

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Recent work has demonstrated that high resolution electron microscopy in plan-view imaging mode is capable of directly imaging surfaces at a resolution of better than 2 angstroms. For the particular case of the Si (111) 7×7 surface, we have been able to image not only the adatoms visible in STM images, but all the atoms in the top three atomic layers including the dimers. The potential applications of this approach and its limitations will be discussed.

Original languageEnglish (US)
Pages (from-to)259-266
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume466
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 4 1996Dec 5 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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