Abstract
Recent work has demonstrated that high resolution electron microscopy in plan-view imaging mode is capable of directly imaging surfaces at a resolution of better than 2 angstroms. For the particular case of the Si (111) 7×7 surface, we have been able to image not only the adatoms visible in STM images, but all the atoms in the top three atomic layers including the dimers. The potential applications of this approach and its limitations will be discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 259-266 |
| Number of pages | 8 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 466 |
| State | Published - 1997 |
| Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 4 1996 → Dec 5 1996 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering