Abstract
This letter describes the use of a sensitive photoresist for direct imaging of optical intensity profiles in near-field photolithographic experiments. A comparison between experimental patterns in exposed, developed photoresist and calculated profiles of intensity shows that this procedure provides a reliable semiquantitative image of the irradiance distribution in the near field; experiment and theory correlate adequately. A potential use of the superficial diffraction contrast recorded in photoresist as the basis for a new method of the fabrication of nanostructures is discussed.
Original language | English (US) |
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Pages (from-to) | 3773-3775 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 26 |
DOIs | |
State | Published - Dec 29 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)