Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code

S. Picozzi*, A. Continenza, R. Asahi, W. Mannstadt, C. B. Geller, A. J. Freeman

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

Original languageEnglish (US)
Pages (from-to)AA4.17.1-AA4.17.6
JournalMaterials Research Society Symposium - Proceedings
Volume677
StatePublished - Dec 1 2001
EventAdvances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Picozzi, S., Continenza, A., Asahi, R., Mannstadt, W., Geller, C. B., & Freeman, A. J. (2001). Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code. Materials Research Society Symposium - Proceedings, 677, AA4.17.1-AA4.17.6.