Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code

S. Picozzi; A. Continenza; R. Asahi; W. Mannstadt; C. B. Geller; A. J. Freeman

doi:10.1557/proc-677-aa4.17

Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code

S. Picozzi^*, A. Continenza, R. Asahi, W. Mannstadt, C. B. Geller, A. J. Freeman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

Original language	English (US)
Pages (from-to)	AA4.17.1-AA4.17.6
Journal	Materials Research Society Symposium - Proceedings
Volume	677
DOIs	https://doi.org/10.1557/proc-677-aa4.17
State	Published - 2001
Event	Advances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{f861980d334849359ede8d1137d9b796,

title = "Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code",

abstract = "We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.",

author = "S. Picozzi and A. Continenza and R. Asahi and W. Mannstadt and Geller, {C. B.} and Freeman, {A. J.}",

year = "2001",

doi = "10.1557/proc-677-aa4.17",

language = "English (US)",

volume = "677",

pages = "AA4.17.1--AA4.17.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Advances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales ; Conference date: 16-04-2001 Through 20-04-2001",

}

TY - JOUR

T1 - Impact ionization and Auger recombination in semiconductors

T2 - Advances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales

AU - Picozzi, S.

AU - Continenza, A.

AU - Asahi, R.

AU - Mannstadt, W.

AU - Geller, C. B.

AU - Freeman, A. J.

PY - 2001

Y1 - 2001

N2 - We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

AB - We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

UR - http://www.scopus.com/inward/record.url?scp=0035742991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035742991&partnerID=8YFLogxK

U2 - 10.1557/proc-677-aa4.17

DO - 10.1557/proc-677-aa4.17

M3 - Conference article

AN - SCOPUS:0035742991

SN - 0272-9172

VL - 677

SP - AA4.17.1-AA4.17.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 16 April 2001 through 20 April 2001

ER -

Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code

Abstract

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