Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires

Iddo Amit; Nari Jeon; Lincoln J. Lauhon; Yossi Rosenwaks

doi:10.1021/acsami.5b07746

Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires

Iddo Amit, Nari Jeon, Lincoln J. Lauhon, Yossi Rosenwaks^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The modulation between different doping species required to produce a diode in VLS-grown nanowires (NWs) yields a complex doping profile, both axially and radially, and a gradual junction at the interface. We present a detailed analysis of the dopant distribution around the junction. By combining surface potential measurements, performed by KPFM, with finite element simulations, we show that the highly doped (5 × 10¹⁹ cm^-3) shell surrounding the NW can screen the junctions built in voltage at shell thickness as low as 3 nm. By comparing NWs with high and low doping contrast at the junction, we show that dopant compensation dramatically decreases the electrostatic width of the junction and results in relatively low leakage currents.

Original language	English (US)
Pages (from-to)	128-134
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	1
DOIs	https://doi.org/10.1021/acsami.5b07746
State	Published - Jan 13 2016

Keywords

Kelvin probe force microscopy
diode
dopant compensation
doping
nanowire
vapor-liquid-solid growth

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.5b07746

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abstract = "The modulation between different doping species required to produce a diode in VLS-grown nanowires (NWs) yields a complex doping profile, both axially and radially, and a gradual junction at the interface. We present a detailed analysis of the dopant distribution around the junction. By combining surface potential measurements, performed by KPFM, with finite element simulations, we show that the highly doped (5 × 1019 cm-3) shell surrounding the NW can screen the junctions built in voltage at shell thickness as low as 3 nm. By comparing NWs with high and low doping contrast at the junction, we show that dopant compensation dramatically decreases the electrostatic width of the junction and results in relatively low leakage currents.",

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author = "Iddo Amit and Nari Jeon and Lauhon, {Lincoln J.} and Yossi Rosenwaks",

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AU - Amit, Iddo

AU - Jeon, Nari

AU - Lauhon, Lincoln J.

AU - Rosenwaks, Yossi

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N2 - The modulation between different doping species required to produce a diode in VLS-grown nanowires (NWs) yields a complex doping profile, both axially and radially, and a gradual junction at the interface. We present a detailed analysis of the dopant distribution around the junction. By combining surface potential measurements, performed by KPFM, with finite element simulations, we show that the highly doped (5 × 1019 cm-3) shell surrounding the NW can screen the junctions built in voltage at shell thickness as low as 3 nm. By comparing NWs with high and low doping contrast at the junction, we show that dopant compensation dramatically decreases the electrostatic width of the junction and results in relatively low leakage currents.

AB - The modulation between different doping species required to produce a diode in VLS-grown nanowires (NWs) yields a complex doping profile, both axially and radially, and a gradual junction at the interface. We present a detailed analysis of the dopant distribution around the junction. By combining surface potential measurements, performed by KPFM, with finite element simulations, we show that the highly doped (5 × 1019 cm-3) shell surrounding the NW can screen the junctions built in voltage at shell thickness as low as 3 nm. By comparing NWs with high and low doping contrast at the junction, we show that dopant compensation dramatically decreases the electrostatic width of the junction and results in relatively low leakage currents.

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KW - nanowire

KW - vapor-liquid-solid growth

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Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires

Abstract

Keywords

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