Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects

Ying Zhou; Tracey Scherban; Guanghai Xu; Jun He; Barbara Miner; Chia Hong Jan; Andrew Ott; Jennifer O'Loughlin; Doug Ingerly; Jihperng Leu

Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects

Ying Zhou^*, Tracey Scherban, Guanghai Xu, Jun He, Barbara Miner, Chia Hong Jan, Andrew Ott, Jennifer O'Loughlin, Doug Ingerly, Jihperng Leu

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.

Original language	English (US)
Pages (from-to)	189-199
Number of pages	11
Journal	Advanced Metallization Conference (AMC)
State	Published - Dec 1 2004
Event	Advanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States Duration: Oct 19 2004 → Oct 21 2004

ASJC Scopus subject areas

Chemical Engineering(all)

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title = "Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects",

abstract = "The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.",

author = "Ying Zhou and Tracey Scherban and Guanghai Xu and Jun He and Barbara Miner and Jan, {Chia Hong} and Andrew Ott and Jennifer O'Loughlin and Doug Ingerly and Jihperng Leu",

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day = "1",

language = "English (US)",

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journal = "Advanced Metallization Conference (AMC)",

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Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects. / Zhou, Ying; Scherban, Tracey; Xu, Guanghai; He, Jun; Miner, Barbara; Jan, Chia Hong; Ott, Andrew; O'Loughlin, Jennifer; Ingerly, Doug; Leu, Jihperng.

In: Advanced Metallization Conference (AMC), 01.12.2004, p. 189-199.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects

AU - Zhou, Ying

AU - Scherban, Tracey

AU - Xu, Guanghai

AU - He, Jun

AU - Miner, Barbara

AU - Jan, Chia Hong

AU - Ott, Andrew

AU - O'Loughlin, Jennifer

AU - Ingerly, Doug

AU - Leu, Jihperng

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.

AB - The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.

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EP - 199

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

SN - 1048-0854

T2 - Advanced Metallization Conference 2004, AMC 2004

Y2 - 19 October 2004 through 21 October 2004

ER -