TY - JOUR
T1 - Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects
AU - Zhou, Ying
AU - Scherban, Tracey
AU - Xu, Guanghai
AU - He, Jun
AU - Miner, Barbara
AU - Jan, Chia Hong
AU - Ott, Andrew
AU - O'Loughlin, Jennifer
AU - Ingerly, Doug
AU - Leu, Jihperng
PY - 2004
Y1 - 2004
N2 - The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.
AB - The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.
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M3 - Conference article
AN - SCOPUS:23844458272
SN - 1540-1766
SP - 189
EP - 199
JO - Advanced Metallization Conference (AMC)
JF - Advanced Metallization Conference (AMC)
T2 - Advanced Metallization Conference 2004, AMC 2004
Y2 - 19 October 2004 through 21 October 2004
ER -