Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects

Ying Zhou*, Tracey Scherban, Guanghai Xu, Jun He, Barbara Miner, Chia Hong Jan, Andrew Ott, Jennifer O'Loughlin, Doug Ingerly, Jihperng Leu

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations


The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.

Original languageEnglish (US)
Pages (from-to)189-199
Number of pages11
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - Dec 1 2004
EventAdvanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States
Duration: Oct 19 2004Oct 21 2004


ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

Zhou, Y., Scherban, T., Xu, G., He, J., Miner, B., Jan, C. H., ... Leu, J. (2004). Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects. Advanced Metallization Conference (AMC), 189-199.