Impact of KOH etching on nanostructure fabricated by local anodic oxidation method

Arash Dehzangi*, Farhad Larki, Burhanuddin B. Majlis, Mahmood Goodarz Naseri, Manizheh Navasery, A. Makarimi Abdullah, Sabar D. Hutagalung, Norihan Abdul Hamid, Mimiwaty Mohd Noor, Mohammadmahdi Vakilian, Elias B. Saion

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on Silicon nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator. An electrochemical process, as the local anodic oxidation followed by two wet chemical etching steps, KOH etching for silicon removal and hydrofluoric etching for oxide removal, were implemented to fabricate the silicon nanostructures. The effect of the pure KOH concentrations (10% to 30% wt) on the quality of the surface is studied. The influence of etching immersing time in etching of nanostructure and SOI surface are considered as well. Impact of different KOH concentrations mixed with 10% IPA with reaction temperature on etch rate is investigated. The KOH etching process is elaborately optimized by 30%wt. KOH + 10%vol. IPA in appropriate time and temperature. The angle of the walls in etch pit for extracted nanowire reveals some deviation from the standard anisotropic etching.

Original languageEnglish (US)
Pages (from-to)8084-8096
Number of pages13
JournalInternational Journal of Electrochemical Science
Issue number6
StatePublished - Jun 2013


  • Isopropyl alcohol (IPA)
  • Local anodic oxidation (LAO)
  • Potassium hydroxide (KOH) wet chemical etching
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electrochemistry


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