Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography

Arash Dehzangi*, Farhad Larki, Sabar D. Hutagalung, Mahmood Goodarz Naseri, Burhanuddin Y. Majlis, Manizheh Navasery, Norihan Abdul Hamid, Mimiwaty Mohd Noor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (1015 cm-3) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The impact of contributing parameters in oxidation such as tip materials, applying voltage on the tip, relative humidity and exposure time are studied. The effect of the etchant concentration (10% to 30% wt) of potassium hydroxide and its mixture with isopropyl alcohol (10%vol. IPA) at different temperatures on silicon surface are expressed. For different KOH concentrations, the effect of etching with the IPA admixture and the effect of the immersing time in the etching process on the structure are investigated. The etching processes are accurately optimized by 30%wt. KOH +10%vol. IPA in appropriate time, temperature, and humidity.

Original languageEnglish (US)
Article numbere65409
JournalPloS one
Issue number6
StatePublished - Jun 11 2013

ASJC Scopus subject areas

  • General


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