Impact of scaling base thickness on the performance of heterojunction phototransistors

Arash Dehzangi, Abbas Haddadi, Sourav Adhikary, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


In this letter we report the effect of vertical scaling on the optical and electrical performance of mid-wavelength infrared heterojunction phototransistors based on type-II InAs/GaSb/AlSb superlattices. The performance of devices with different base thickness was compared as the base was scaled from 60 down to 40 nm. The overall optical performance shows enhancement in responsively, optical gain, and specific detectivity upon scaling the base width. The saturated responsivity for devices with 40 nm bases reaches 8845 and 9528 A W-1 at 77 and 150 K, respectively, which is almost five times greater than devices with 60 nm bases. The saturated optical gain for devices with 40 nm bases is measured as 2760 at 77 K and 3081 at 150 K. The devices with 40 nm bases also exhibit remarkable enhancement in saturated current gain, with 17690 at 77 K, and 19050 at 150 K.

Original languageEnglish (US)
Article number10LT01
Issue number10
StatePublished - Feb 2 2017


  • Type-II InAs/AlSb/GaSb superlattices
  • base width
  • heterojunction phototransistor
  • mid-wavelength infrared
  • optical gain
  • responsivity

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Electrical and Electronic Engineering


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