Importance of Auger effect on the efficiency of Er-related luminescence in InP:Er

X. Z. Wang; B. W. Wessels

doi:10.4028/www.scientific.net/msf.196-201.657

Importance of Auger effect on the efficiency of Er-related luminescence in InP:Er

X. Z. Wang^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The quenching of the characteristic 4f shell emission of Er-doped InP by Auger processes was investigated. For carrier concentrations greater than 3 × 10¹⁷ cm^-3 the luminescence efficiency weakly depends on free carrier concentration. A theoretical model for quenching of the intra-4f-shell emission was developed in which screening by the outer shell electrons was taken into account. Excellent agreement between theory and experiment for luminescence quenching was noted.

Original language	English (US)
Pages (from-to)	657-662
Number of pages	6
Journal	Materials Science Forum
Volume	196-201
Issue number	pt 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.196-201.657
State	Published - 1995
Event	Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: Jul 23 1995 → Jul 28 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Importance of Auger effect on the efficiency of Er-related luminescence in InP:Er",

abstract = "The quenching of the characteristic 4f shell emission of Er-doped InP by Auger processes was investigated. For carrier concentrations greater than 3 × 1017 cm-3 the luminescence efficiency weakly depends on free carrier concentration. A theoretical model for quenching of the intra-4f-shell emission was developed in which screening by the outer shell electrons was taken into account. Excellent agreement between theory and experiment for luminescence quenching was noted.",

author = "Wang, {X. Z.} and Wessels, {B. W.}",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) ; Conference date: 23-07-1995 Through 28-07-1995",

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T1 - Importance of Auger effect on the efficiency of Er-related luminescence in InP:Er

AU - Wang, X. Z.

AU - Wessels, B. W.

PY - 1995

Y1 - 1995

N2 - The quenching of the characteristic 4f shell emission of Er-doped InP by Auger processes was investigated. For carrier concentrations greater than 3 × 1017 cm-3 the luminescence efficiency weakly depends on free carrier concentration. A theoretical model for quenching of the intra-4f-shell emission was developed in which screening by the outer shell electrons was taken into account. Excellent agreement between theory and experiment for luminescence quenching was noted.

AB - The quenching of the characteristic 4f shell emission of Er-doped InP by Auger processes was investigated. For carrier concentrations greater than 3 × 1017 cm-3 the luminescence efficiency weakly depends on free carrier concentration. A theoretical model for quenching of the intra-4f-shell emission was developed in which screening by the outer shell electrons was taken into account. Excellent agreement between theory and experiment for luminescence quenching was noted.

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SP - 657

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JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 2

T2 - Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)

Y2 - 23 July 1995 through 28 July 1995

ER -

Importance of Auger effect on the efficiency of Er-related luminescence in InP:Er

Abstract

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