Importance of Auger effect on the efficiency of Er-related luminescence in InP:Er

X. Z. Wang*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The quenching of the characteristic 4f shell emission of Er-doped InP by Auger processes was investigated. For carrier concentrations greater than 3 × 1017 cm-3 the luminescence efficiency weakly depends on free carrier concentration. A theoretical model for quenching of the intra-4f-shell emission was developed in which screening by the outer shell electrons was taken into account. Excellent agreement between theory and experiment for luminescence quenching was noted.

Original languageEnglish (US)
Pages (from-to)657-662
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 2
StatePublished - Dec 1 1995
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: Jul 23 1995Jul 28 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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