TY - JOUR
T1 - Improve the n-type performance in organic heterojunction transistors by controlling thickness of copper phthalocyanine
AU - Zhou, Jianlin
AU - Shen, Xiaoqing
AU - Wang, Zhen
AU - Hu, Shengdong
AU - Huang, Wei
AU - Yu, Xinge
AU - Gan, Ping
PY - 2015/5/1
Y1 - 2015/5/1
N2 - N-type C60 thin film transistors with heterojunction were fabricated by introducing copper phthalocyanine (CuPc) modifying layer between polymer dielectrics and C60 semiconductor. Comparing with conventional organic thin film transistors (OTFTs) based on single C60 layer, such devices can not only boost the electron mobility up to 3 times, but also well control threshold voltage VT and off current Ioff by optimizing CuPc thickness. The performance improvement can be attributed to the increase of free electron carriers by the dipole effect at the C60/CuPc interface, and better C60 film quality grown upon CuPc.
AB - N-type C60 thin film transistors with heterojunction were fabricated by introducing copper phthalocyanine (CuPc) modifying layer between polymer dielectrics and C60 semiconductor. Comparing with conventional organic thin film transistors (OTFTs) based on single C60 layer, such devices can not only boost the electron mobility up to 3 times, but also well control threshold voltage VT and off current Ioff by optimizing CuPc thickness. The performance improvement can be attributed to the increase of free electron carriers by the dipole effect at the C60/CuPc interface, and better C60 film quality grown upon CuPc.
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U2 - 10.1051/epjap/2015150149
DO - 10.1051/epjap/2015150149
M3 - Article
AN - SCOPUS:84930504307
SN - 1286-0042
VL - 70
JO - Journal De Physique, III
JF - Journal De Physique, III
IS - 2
M1 - 20102
ER -