Improved high-temperature performance of 1.3-1.5-μm InNAsP-InGaAsP quantum-well microdisk lasers

W. G. Bi*, Y. Ma, J. P. Zhang, L. W. Wang, S. T. Ho, C. W. Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

We report for the first time lasing action in the InNAsP-InGaAsP material system. Dramatic improvement in lasing action in a microdisk cavity was observed at elevated temperature up to 70 °C, which is about 120 °C higher than that of InGaAs-InGaAsP microdisk. This resulted in the first optically pumped InNAsP-InGaAsP microdisk lasers capable of above room-temperature lasing. The improvement of lasing temperature can be attributed to a large conduction band offset between the quantum well and barriers in the InNAsP-InGaAsP material system.

Original languageEnglish (US)
Pages (from-to)1072-1074
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number8
DOIs
StatePublished - Aug 1997

Keywords

  • Carrier leakage
  • Characteristics temperature
  • InNAsP-InGaAsP quantum well
  • Microdisk lasers
  • Optical-fiber windows

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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