Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Daewoong Kwon*, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Hong Zhou, Angada B. Sachid, Roberto dos Reis, Chenming Hu, Sayeef Salahuddin

*Corresponding author for this work

Research output: Contribution to journalArticle

61 Scopus citations

Abstract

Negative capacitance (NC) FETs with channel lengths from 30 nm to 50~\mu \text{m} , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.

Original languageEnglish (US)
Article number8239602
Pages (from-to)300-303
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number2
DOIs
StatePublished - Feb 2018

Keywords

  • Ferroelectric
  • hafnium zirconium oxide
  • negative capacitance
  • negative drain induced barrier lowering (DIBL)
  • short-channel transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Kwon, D., Chatterjee, K., Tan, A. J., Yadav, A. K., Zhou, H., Sachid, A. B., dos Reis, R., Hu, C., & Salahuddin, S. (2018). Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors. IEEE Electron Device Letters, 39(2), 300-303. [8239602]. https://doi.org/10.1109/LED.2017.2787063