@article{d85e37246988422786102fe4f63197ae,
title = "Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors",
abstract = "Negative capacitance (NC) FETs with channel lengths from 30 nm to 50~\mu \text{m} , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.",
keywords = "Ferroelectric, hafnium zirconium oxide, negative capacitance, negative drain induced barrier lowering (DIBL), short-channel transistor",
author = "Daewoong Kwon and Korok Chatterjee and Tan, {Ava J.} and Yadav, {Ajay K.} and Hong Zhou and Sachid, {Angada B.} and {dos Reis}, Roberto and Chenming Hu and Sayeef Salahuddin",
note = "Funding Information: Manuscript received November 13, 2017; revised December 11, 2017; accepted December 19, 2017. Date of publication December 25, 2017; date of current version January 25, 2018. This work was supported in part by the Berkeley Center for Negative Capacitance Transistors and in part by the Energy Technology Area of Lawrence Berkeley National Laboratory. The work of A. J. Tan was supported by the Lam Research Graduate Fellowship. The review of this letter was arranged by Editor Z. Chen. (Corresponding author: Daewoong Kwon.) D. Kwon, K. Chatterjee, A. J. Tan, A. K. Yadav, H. Zhou, A. B. Sachid, C. Hu, and S. Salahuddin are with the Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720 USA (e-mail: dw79kwon@eecs.berkeley.edu). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2018",
month = feb,
doi = "10.1109/LED.2017.2787063",
language = "English (US)",
volume = "39",
pages = "300--303",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}