Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13

J. F. Meng; N. V Chandra Shekar; D. Y. Chung; M. Kanatzidis; J. V. Badding

doi:10.1063/1.1599049

Improvement in the thermoelectric properties of pressure-tuned β-K₂Bi₈Se₁₃

J. F. Meng^*, N. V Chandra Shekar, D. Y. Chung, M. Kanatzidis, J. V. Badding

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

A report on the thermoelectric properties of the semiconductor β-K₂Bi₈Se₁₃, analyzed under pressure, was presented. X-ray diffraction technique was used to study the structural change upon compression. The peak in the thermoelectric power was found suggestive of an electronic topological transition upon compression.

Original language	English (US)
Pages (from-to)	4485-4488
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.1599049
State	Published - Oct 1 2003

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1599049

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title = "Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13",

abstract = "A report on the thermoelectric properties of the semiconductor β-K2Bi8Se13, analyzed under pressure, was presented. X-ray diffraction technique was used to study the structural change upon compression. The peak in the thermoelectric power was found suggestive of an electronic topological transition upon compression.",

author = "Meng, {J. F.} and Shekar, {N. V Chandra} and Chung, {D. Y.} and M. Kanatzidis and Badding, {J. V.}",

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AU - Meng, J. F.

AU - Shekar, N. V Chandra

AU - Chung, D. Y.

AU - Kanatzidis, M.

AU - Badding, J. V.

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N2 - A report on the thermoelectric properties of the semiconductor β-K2Bi8Se13, analyzed under pressure, was presented. X-ray diffraction technique was used to study the structural change upon compression. The peak in the thermoelectric power was found suggestive of an electronic topological transition upon compression.

AB - A report on the thermoelectric properties of the semiconductor β-K2Bi8Se13, analyzed under pressure, was presented. X-ray diffraction technique was used to study the structural change upon compression. The peak in the thermoelectric power was found suggestive of an electronic topological transition upon compression.

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Improvement in the thermoelectric properties of pressure-tuned β-K₂Bi₈Se₁₃

Abstract

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