In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions

C. Grezes*, A. Rojas Rozas, F. Ebrahimi, J. G. Alzate, X. Cai, J. A. Katine, J. Langer, B. Ocker, P. Khalili Amiri, K. L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The effect of in-plane magnetic field on switching voltage (Vsw) and thermal stability factor (Δ) are investigated in electric-field-controlled perpendicular magnetic tunnel junctions (p-MTJs). Dwell time measurements are used to determine the voltage dependence of the energy barrier height for various in-plane magnetic fields (Hin), and gain insight into the Hin dependent energy landscape. We find that both Vsw and Δ decrease with increasing Hin, with a dominant linear dependence. The results are reproduced by calculations based on a macrospin model while accounting for the modified magnetization configuration in the presence of an external magnetic field.

Original languageEnglish (US)
Article number075014
JournalAIP Advances
Volume6
Issue number7
DOIs
StatePublished - Jul 1 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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