Abstract
Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organometallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (<≊7×1014 Ba/cm2) the films grown [110]YBCO∥[100]MgO. For thick BaO layers (≳≊11×1014 Ba/cm2) the films grow [100]YBCO∥[100]MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described.
Original language | English (US) |
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Pages (from-to) | 3037-3039 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 21 |
DOIs | |
State | Published - 1996 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)