In-plane orientation control of (001)YBa2Cu3O7-δ grown on (001)MgO by pulsed organometallic beam epitaxy

D. B. Buchholz*, J. S. Lei, S. Mahajan, P. R. Markworth, R. P.H. Chang, B. Hinds, T. J. Marks, J. L. Schindler, C. R. Kannewurf, Y. Huang, K. L. Merkle

*Corresponding author for this work

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Abstract

Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organometallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (<≊7×1014 Ba/cm2) the films grown [110]YBCO∥[100]MgO. For thick BaO layers (≳≊11×1014 Ba/cm2) the films grow [100]YBCO∥[100]MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described.

Original languageEnglish (US)
Pages (from-to)3037-3039
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number21
DOIs
StatePublished - Dec 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Buchholz, D. B., Lei, J. S., Mahajan, S., Markworth, P. R., Chang, R. P. H., Hinds, B., Marks, T. J., Schindler, J. L., Kannewurf, C. R., Huang, Y., & Merkle, K. L. (1996). In-plane orientation control of (001)YBa2Cu3O7-δ grown on (001)MgO by pulsed organometallic beam epitaxy. Applied Physics Letters, 68(21), 3037-3039. https://doi.org/10.1063/1.115569