In situ cross-sectional scanning tunneling microscopy sample preparation technique

Y. C. Kim*, M. J. Nowakowski, David N Seidman

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy (XSTM) applications. This technique can be easily adapted to any ultrahigh vacuum (UHV) STM that has a coarse motion capability. A conducting diamond STM tip is used to create micron long scratches on Ge/GaAs or GaAs {001}-type surfaces. These {001} surfaces are imaged with STM to observe scratch characteristics, and GaAs samples are cleaved to reveal {110}-type faces. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

Original languageEnglish (US)
Pages (from-to)129-134
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume399
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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