Abstract
The crystallization kinetics of Zn0.3In1.4Sn0.3O3 (ZITO-30) thin films is investigated via isothermal in situ transmission electron microscopy measurements. Extensive analysis is conducted to reveal the nucleation mechanism and growth rate at four different temperatures. The results show that the nucleation rate in this system is time-dependent and continuously decelerates following a power law decay. The crystal growth rate is constant at a given temperature, and interface-limited growth is the controlling mechanism in the kinetics of amorphous ZITO-30 crystallization. The activation energy for the overall process and interface growth are derived from the experimental data. A morphological study of the grains shows that the {100} interfaces have low mobility and are responsible for the anisotropic crystal shapes. It is found that the {111} and {100} planes of the crystal form parallel to the film-vapor interface during the nucleation process. The results demonstrate a rather complex yet tractable correlation between the experimental results and theoretical underpinning in complex multicomponent oxide thin films.
Original language | English (US) |
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Pages (from-to) | 1396-1403 |
Number of pages | 8 |
Journal | Crystal Growth and Design |
Volume | 17 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1 2017 |
Funding
This publication is based on work supported by the Materials Research Science and Engineering Center (NSF-MRSEC) (DMR-1121262) of Northwestern University. This research made use of the EPIC and Keck-II facilities of Northwestern University's NUANCE Center, which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205), the MRSEC program (NSF DMR-1121262) at the Materials Research Center, the International Institute for Nanotechnology (IIN), the Keck Foundation, and the State of Illinois.
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics