In situ growth and characterization of ultrahard thin films

E. Bengu; C. Collazo-Davila; D. Grozea; E. Landree; I. Widlow; M. Guruz; L. D. Marks

doi:10.1002/(SICI)1097-0029(19980915)42:4<295::AID-JEMT8>3.0.CO;2-P

In situ growth and characterization of ultrahard thin films

E. Bengu^*, C. Collazo-Davila, D. Grozea, E. Landree, I. Widlow, M. Guruz, L. D. Marks

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Results concerning the operation of a new ultrahigh vacuum (UHV) ion- beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic- boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ.

Original language	English (US)
Pages (from-to)	295-301
Number of pages	7
Journal	Microscopy Research and Technique
Volume	42
Issue number	4
DOIs	https://doi.org/10.1002/(SICI)1097-0029(19980915)42:4<295::AID-JEMT8>3.0.CO;2-P
State	Published - Aug 15 1998

Keywords

Electron microscopy
Thin film deposition
Ultrahard thin films

ASJC Scopus subject areas

Instrumentation
Medical Laboratory Technology
Anatomy
Histology

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10.1002/(SICI)1097-0029(19980915)42:4<295::AID-JEMT8>3.0.CO;2-P

Cite this

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title = "In situ growth and characterization of ultrahard thin films",

abstract = "Results concerning the operation of a new ultrahigh vacuum (UHV) ion- beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic- boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ.",

keywords = "Electron microscopy, Thin film deposition, Ultrahard thin films",

author = "E. Bengu and C. Collazo-Davila and D. Grozea and E. Landree and I. Widlow and M. Guruz and Marks, \{L. D.\}",

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T1 - In situ growth and characterization of ultrahard thin films

AU - Bengu, E.

AU - Collazo-Davila, C.

AU - Grozea, D.

AU - Landree, E.

AU - Widlow, I.

AU - Guruz, M.

AU - Marks, L. D.

PY - 1998/8/15

Y1 - 1998/8/15

N2 - Results concerning the operation of a new ultrahigh vacuum (UHV) ion- beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic- boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ.

AB - Results concerning the operation of a new ultrahigh vacuum (UHV) ion- beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic- boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ.

KW - Electron microscopy

KW - Thin film deposition

KW - Ultrahard thin films

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In situ growth and characterization of ultrahard thin films

Abstract

Keywords

ASJC Scopus subject areas

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