In situ growth and characterization of ultrahard thin films

E. Bengu*, C. Collazo-Davila, D. Grozea, E. Landree, I. Widlow, M. Guruz, L. D. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Results concerning the operation of a new ultrahigh vacuum (UHV) ion- beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic- boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ.

Original languageEnglish (US)
Pages (from-to)295-301
Number of pages7
JournalMicroscopy Research and Technique
Issue number4
StatePublished - Aug 15 1998


  • Electron microscopy
  • Thin film deposition
  • Ultrahard thin films

ASJC Scopus subject areas

  • Anatomy
  • Histology
  • Instrumentation
  • Medical Laboratory Technology

Fingerprint Dive into the research topics of 'In situ growth and characterization of ultrahard thin films'. Together they form a unique fingerprint.

Cite this