In situ growth of highly oriented Pb(Zr0.5Ti0.5)O3 thin films by low-temperature metal-organic chemical vapor deposition

G. R. Bai*, I. Fei Tsu, A. Wang, C. M. Foster, C. E. Murray, V. P. Dravid

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Highly oriented, polycrystalline Pb(Zr0.5Ti0.5)O3 (PZT) thin films were successfully grown on RuO2/SiO2/(001)Si using metal-organic chemical vapor deposition (MOCVD) at 525°C. The orientation of the PZT film was controlled by using MOCVD-deposited highly textured RuO2 bottom electrodes. A (001)-oriented PZT film was observed for growth on (101)-textured RuO2. In contrast, for (110) RuO2, the growth of (001) PZT was greatly suppressed while the growth of both (110) and (111) were enhanced, resulting in a poorly (001)-textured polycrystalline film. The as-grown PZT films exhibited a dense columnar microstructure with an average grain size of 150-250 nm. Both PZT films showed excellent ferroelectric properties without any postgrowth annealing. The (001) highly oriented PZT films showed significantly higher values of remnant polarization (Pr=49.7μC/cm2) and saturation polarization (Ps=82.5μC/cm2). In comparison, for the PZT films grown on (110) RuO2, Pr and Ps were 21.5 and 35.4μC/cm2, respectively.

Original languageEnglish (US)
Pages (from-to)1572-1574
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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